Graphene nanoribbons (GNRs) have recently emerged as promising candidates for channel
materials in future nanoelectronic devices due to their exceptional electronic, thermal, and …

In the electronics industry, binary devices have played a critical role since the development
of solid-state transistors. While binary technology associates devices' inherent ability to be …

Graphene nanoribbon (GNR) devices are being extensively investigated as possible
candidates for replacing silicon-channel devices in the next-generation integrated circuits …

Attaining low energy consumption in digital circuits design is a main task for designers
because emerging applications are based on batteries and face limited-energy. Designing …

The ascending trend of Moore's law has stretched to the horizon, where the prospects of
carbon-based materials show the potential of replacing the silicon-based complementary …

Graphene nanoribbon and transition metal dichalcogenide field‐effect transistors (GNRFETs
and TMDFETs) have emerged as favorable candidates to replace conventional metal‐oxide …

This study presents a novel CMOS self-gated flip flop for low power and area efficient
applications. The low power operations are achieved by deactivating the clock signal when …

The use of graphene nano-ribbon field-effect transistors (GNRFETs) in the nanoscale
circuits design is challenging because there are several adjustable parameters that need to …

In this paper, by using electrical junction in part of drain region which includes stepwise
doping distribution, a new structure is proposed for tunneling carbon nanotube field-effect …

In this paper a novel graphene nanoribbon transistor with electrically induced junction for
source and drain regions is proposed. An auxiliary junction is used to form electrically …