[HTML][HTML] High electron mobility of AlxGa1− xN evaluated by unfolding the DFT band structure
We calculate the alloy-disorder-limited electron mobility of Al x Ga 1− x N from first
principles. Al x Ga 1− x N is a technologically important ultra-wide-bandgap alloy with …
principles. Al x Ga 1− x N is a technologically important ultra-wide-bandgap alloy with …
Atomic-scale quantitative analysis of implanted Mg in annealed GaN layers on free-standing GaN substrates
Achieving efficient p-type conduction in Mg-implanted GaN depends largely on
postimplantation annealing conditions. Here, we study the effect of postimplantation …
postimplantation annealing conditions. Here, we study the effect of postimplantation …
Impact of high-temperature Mg-implantation on defects and dopants distribution in GaN
We have investigated the impact of high-temperature Mg-implantation in GaN layers on
distribution of Mg-enriched defects using scanning transmission electron microscopy and …
distribution of Mg-enriched defects using scanning transmission electron microscopy and …
Monolayer‐Range Compositional Modulations in Al x Ga1−x N(x = 0.6–0.75) Layers Grown Using Plasma‐Assisted Molecular Beam Epitaxy under Me‐Rich …
Al x Ga1− x N layers (x= 0.6− 0.75) grown using plasma‐assisted molecular beam epitaxy
with alternating metal‐enriched stoichiometric conditions using an off‐centered nitrogen flux …
with alternating metal‐enriched stoichiometric conditions using an off‐centered nitrogen flux …
New workflows broaden access to S/TEM analysis and increase productivity
B Van Leer, R Geurts, R Scharfschwerdt, H Cheng, L Li… - 2018 - academic.oup.com
The DualBeam, which combines focused ion beam and scanning electron microscope (FIB-
SEM), is regularly used for sample preparation in transmission electron microscopy (TEM). A …
SEM), is regularly used for sample preparation in transmission electron microscopy (TEM). A …