In accordance with the invention an electronic device is provided with a thin film dielectric
layer of enhanced reliability. The dielectric comprises a thin film of silicon oxide having …

The present invention relates to flash EEPROMs (Electrically Erasable Programmable Read
Only Memories) in general, and in particular, to a method of Suppressing the gradual gate …

209a positively biased conductive member positioned proximate the second region of
plasma serves as an ion extractor. A positive bias of about 50-300V is applied to the ion …

Methods of depositing thin seed layers that improve continu ity of the seed layer as well as
adhesion to the barrier layer are provided. According to various embodiments, the methods …

(22) File pr. 3, may be formed by means of a nitride implant with sufficient (51) Int.
Cl."....................... H01L 29/04; H01L 31/036; energy to pass through a Surface …

(57) ABSTRACT A layer of diffusion barrier or seed material is deposited on a
semiconductor Substrate having a recessed feature. The method may include a series of …

Metal seed layers are deposited on a semiconductor Substrate having recessed features by
a method that involves depositing a first portion of seed layer material, Subsequently …

Related US Application Data is a continuation-in-part of application No. 1 1/588, 586, filed
on Oct. 26, 2006, now Pat. No. 7,781,327, which is a continuation-in-part of application No …

Accordingly, a method of forming an improved dielectric layer for a semiconductor device is
provided. The method comprises the Steps of: a) preparing a semiconductor Substrate; b) …

(54) METHODS AND APPARATUS FOR 4,604, 180 A 8, 1986 Hirukawa et al.
ENGINEERING AN INTERFACE BETWEEN A 4,609,903. A 9/1986 Toyokura et al …