Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely
suitable for depositing uniform and conformal films on complex three-dimensional …

Plasma-assisted atomic layer deposition (ALD) is an energy-enhanced method for the
synthesis of ultra-thin films with Å-level resolution in which a plasma is employed during one …

Gallia-based shells with a thickness varying from a submonolayer to ca. 2.5 nm were
prepared by atomic layer deposition (ALD) using trimethylgallium, ozone, and partially …

The fabrication of next-generation semiconductor devices has created a need for low-
temperature (≤ 400 C) deposition of highly-conformal (> 95%) SiO 2, SiN x, and SiC films …

In this review, we discuss the progress of emerging dry processes for nanoscale fabrication
of high-aspect-ratio features, including emerging design technology for manufacturability …

Tunnel oxide passivated contact (TOPCon) silicon solar cells are rising as a competitive
photovoltaic technology, seamlessly blending high efficiency with cost-effectiveness and …

Atomic layer deposition (ALD) is a popular deposition technique comprising two or more
sequential, self-limiting surface reactions, which make up an ALD cycle. Energy-enhanced …

During the past decade, atomic layer deposition (ALD) has become an important thin-film
deposition method in microelectronics industry, and it has also gained a lot of interest in …

For atomic layer deposition (ALD) of doped, ternary, and quaternary materials achieved by
combining multiple binary ALD processes, it is often difficult to correlate the material …

Alumina and aluminosilicates, prepared under various synthesis conditions, play a central
role in heterogeneous catalysis with a broad range of industrial applications. We report …