A new generation of high-efficiency power devices is being developed using wide bandgap
(WBG) semiconductors, like GaN and SiC, which are emerging as attractive alternatives to …

There is renewed emphasis on development of robust solid-state sensors capable of
uncooled operation in harsh environments. The sensors should be capable of detecting …

The rapid development of the RF power electronics requires the introduction of wide
bandgap material due to its potential in high output power density, high operation voltage …

An advantage for some wide bandgap materials, that is often overlooked, is that the thermal
coefficient of expansion (CTE) is better matched to the ceramics in use for packaging …

III-V semiconductors have high mobility and will be used in field effect transistors with the
appropriate gate dielectric. The dielectrics must have band offsets over 1 eV to inhibit …

We report on a GaN metal-oxide-semiconductor high-electron-mobility-transistor (MOS-
HEMT) using atomic-layer-deposited (ALD) Al 2 O 3 as the gate dielectric. Compared to a …

In this article, we review recent progress on AlGaN/GaN and InAlN/GaN metal-insulator-
semiconductor high-electron-mobility transistors (MIS-HEMTs) using Al-based oxides, nitride …

We report on AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors
(MOS-HFETs) grown over insulating 4H–SiC substrates. We demonstrate that the dc and …

The recent shift in focus from defense and government work to commercial wireless efforts
has caused the job of the typical microwave engineer to change dramatically. The modern …

An AlN barrier high electron mobility transistor (HEMT) based on the AlN/Al 0.85 Ga 0.15 N
heterostructure was grown, fabricated, and electrically characterized, thereby extending the …