In recent years, semipolar InGaN-based blue laser diodes (LDs) have raised indescribable appeal within solid-state lighting industry as promising alternatives for currently available …
We have successfully demonstrated InGaN/GaN edge-emitting laser diodes (EELDs) on a fully coalesced epitaxial lateral overgrown film from a c-plane GaN substrate. We achieve a …
Edge-emitting laser diodes (LDs) were fabricated on a reduced dislocation density epitaxial lateral overgrown (ELO) wing of a semipolar {20 2¯ 1} GaN substrate, termed an ELO wing …
Edge-emitting laser diodes (LDs) were fabricated on a reduced dislocation density epitaxial lateral overgrown (ELO) wing of a semipolar {202̅1} GaN substrate, termed an ELO wing …