100 μm-cavity GaN-based edge emitting laser diodes by the automatic cleavage technique using GaN-on-Si epitaxial lateral overgrowth

Y Kawaguchi, K Murakawa, M Usagawa… - Crystal Growth & …, 2023 - ACS Publications
We propose a novel laser diode (LD) fabrication process that yields 100 μm-cavity GaN-
based edge emitting LDs with cleaved facets. In this process, epitaxial layers for LDs are …

[HTML][HTML] Comparative investigation into key optoelectronic characteristics of semipolar InGaN blue laser diodes: A strategy to mitigate quantum-confine stark effect

S Roy, SMT Ahsan, N Mondol, MM Hasan, D Kundu… - Results in Physics, 2022 - Elsevier
In recent years, semipolar InGaN-based blue laser diodes (LDs) have raised indescribable
appeal within solid-state lighting industry as promising alternatives for currently available …

InGaN/GaN edge emitting laser diodes using an epitaxial lateral overgrowth with a low-defect density area of more than 75%

HM Chang, S Gandrothula, S Gee, T Tak… - Japanese Journal of …, 2024 - iopscience.iop.org
We have successfully demonstrated InGaN/GaN edge-emitting laser diodes (EELDs) on a
fully coalesced epitaxial lateral overgrown film from a c-plane GaN substrate. We achieve a …

Semipolar {20 2¯ 1} GaN Edge-Emitting Laser Diode on Epitaxial Lateral Overgrown Wing

S Gandrothula, H Zhang, P Shapturenka, R Anderson… - Crystals, 2021 - mdpi.com
Edge-emitting laser diodes (LDs) were fabricated on a reduced dislocation density epitaxial
lateral overgrown (ELO) wing of a semipolar {20 2¯ 1} GaN substrate, termed an ELO wing …

[PDF][PDF] Semipolar {20𝟐̅1} GaN Edge-Emitting Laser Diode on Epitaxial Lateral Overgrown Wing

S Gandrothula, H Zhang, P Shapturenka, R Anderson… - 2022 - videleaf.com
Edge-emitting laser diodes (LDs) were fabricated on a reduced dislocation density epitaxial
lateral overgrown (ELO) wing of a semipolar {202̅1} GaN substrate, termed an ELO wing …