We report a new record total‐area efficiency of 19· 9% for CuInGaSe2‐based thin‐film solar
cells. Improved performance is due to higher fill factor. The device was made by three‐stage …

Chalcopyrite copper indium sulfide (CuInS2) and copper indium gallium selenide (Cu (In x
Ga1-x) Se2; CIGS) nanocrystals ranging from∼ 5 to∼ 25 nm in diameter were synthesized …

Thin-film solar cells based on copper indium gallium selenide (CIGS) and perovskites
continue to enhance their market share as promising energy conversion devices for indoor …

The temperature-dependent conductivity of Cu 2 ZnSnS 4 (CZTS) thin films prepared by
sulfurization of different sputtered ZnS/Cu/Sn stacks and also of the same stack annealed for …

To achieve a high fill factor, a small diode factor close to 1 is essential. The optical diode
factor determined by photoluminescence is the diode factor from the neutral zone of the …

Abstract Cu 2 ZnSnS 4 (CZTS) thin films were fabricated by a sol–gel sulfurization method
with a rapid thermal process. The films preheated at 250 C for 1 h and sulfurized from 350 to …

This study reports on the beneficial effect of an absorber surface passivation by Al 2 O 3 on
the performance of Cu (In, Ga) Se 2 (CIGSe) solar cells. Here the Al 2 O 3 layer is deposited …

Semiconducting barium disilicide (BaSi 2) is one of the emerging materials for light absorber
layers in solar cell applications. We investigated the effect of post-annealing on various …

Cd 1-x Zn x S thin films have been grown by two-electrode electrodeposition method using
an electrolytic bath containing cadmium chloride, zinc chloride and sodium thiosulphate …

Chalcopyrite copper–indium–gallium diselenides (CIGS) have emerged as promising
materials with remarkable electronic properties and potential applicability to high-efficiency …