Theoretical investigation on defect induced changes in electronic structure and magnetism of Eu-doped In2S3
Z Li, B He, S Yu, G Sun - Solid State Sciences, 2022 - Elsevier
Using density functional theory calculations, the effects of various point defects, including
indium vacancy (V In) and europium doping (Eu In), on the crystal structure, electronic …
indium vacancy (V In) and europium doping (Eu In), on the crystal structure, electronic …
Effect of sulfur on dielectric properties of Cd–Se Glassy system
M Ganaie, MA Alvi, M Zulfequar - Journal of Materials Science: Materials in …, 2016 - Springer
Cd 4 Se 96− x S x with x= 0, 4, 8, 12 amorphous semiconductor has been prepared by melt-
quenching technique. Bulk samples in the form of powder were characterized by XRD which …
quenching technique. Bulk samples in the form of powder were characterized by XRD which …
Ab Initio Study of Structural, Electronic, and Magnetic Properties of Mn x BVI: In1−x Mn x S-Diluted Magnetic …
First-principles density functional calculations on the new class of diluted magnetic
semiconductor A 1− x III Mn x B VI A_1-x^IIIMn_xB^VI In 1− x Mn x S for x= 0.25 and 0.5 are …
semiconductor A 1− x III Mn x B VI A_1-x^IIIMn_xB^VI In 1− x Mn x S for x= 0.25 and 0.5 are …
[PDF][PDF] In2S3 alternative buffer layers for Cu (In, Ga) Se2 solar cells deposited by RF magnetron sputtering
P Soni - scholar.archive.org
A thin semiconducting material of thickness∼ 50 nm known as a buffer layer is the key for
obtaining high efficiencies in Cu (In, Ga) Se2 (CIGSe) thin film solar cells. A thin buffer layer …
obtaining high efficiencies in Cu (In, Ga) Se2 (CIGSe) thin film solar cells. A thin buffer layer …