Modeling of the RF coaxial TSV configuration inside the silicon interposer with embedded cooling cavity

W Li, Z Liu, W Qian, Z Wang, W Wang… - IEEE Transactions …, 2021 - ieeexplore.ieee.org
In this article, a low-loss RF coaxial through-silicon vias (TSVs)(C-TSVs) configuration in the
silicon interposer with the embedded cooling cavity is proposed. For the single C-TSV array …

Distribution optimization of thermal through-silicon via for 3D chip based on thermal-mechanic coupling

X Guan, K Xi, Z Xie, J Zhang, Z Lu, Y Ge - Microelectronics Journal, 2023 - Elsevier
This study establishes a unit cell model of thermal-mechanical coupling of 3D chip thermal
through-silicon via (TTSV), and conducts optimization study under the constraints of the …

Electrical characterization of through-silicon-via-based coaxial line for high-frequency 3d integration

Z Zhao, J Li, H Yuan, Z Wang, G Gugliandolo… - Electronics, 2022 - mdpi.com
Through-silicon-via (TSV)-based coaxial line techniques can reduce the high-frequency loss
due to the low resistivity in the silicon substrate and thus can improve the efficiency of …

Miniaturization Strategy for Directional Couplers Based on Through-Silicon Via Insertion and Neuro-Transfer Function Modeling Method

W Xiong, G Dong, C Zhi, Y Wang… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
Enhancing the integration of directional couplers is a crucial challenge in the design of
wireless communication circuits and systems. This article proposes a design strategy based …

Etching mechanism of high-aspect-ratio array structure

G Zhiting, M Zhuang, G Lihong, L Qiang… - Microelectronic …, 2023 - Elsevier
Abstract Through-Silicon-Via (TSV) is an significant technology that is being widely
employed in micro-electro-mechanical system (MEMS) manufactories. However, it is remain …

A Novel Double-Sided Etching and Electroplating Fabrication Scheme for Coaxial Through-Silicon-Vias in 3-D Integration

Z Chen, X Chen, H Wang, Z Cai… - … on Electron Devices, 2024 - ieeexplore.ieee.org
Compared to conventional through-silicon-via (TSV) technology, coaxial TSVs can provide
better radio frequency (RF) transmission performance in terms of reduced transmission loss …

Effects of 60Co γ ray radiation on the transmission characteristics of interconnection structures for 3D packaging

Y Zhang, Y Liu, R Cao, X Zeng, Y Xue - Microelectronics International, 2023 - emerald.com
Purpose Concerning the radiation effects on the three-dimensional (3D) packaging in space
environment, this study aims to investigate the influence of the total dose effect on the …

A tunable macro-modeling method for signal transition in mm-wave flip-chip technology

P Namaki, N Masoumi… - 2021 IEEE 25th …, 2021 - ieeexplore.ieee.org
In this work, a method for developing a lumped-element circuit macro-modeling of
micro/millimeter-wave flip-chip ball interconnects is proposed. The developed macro-model …

Improved Signal Integrity at 64 Gbps in a 130-nm SiGe Optical Receiver With Through-Silicon Vias

G Movaghar, J Liu, J Dalton… - 2022 IEEE BiCMOS …, 2022 - ieeexplore.ieee.org
This paper provides a comparative study of packaging features of a high-speed silicon-
germanium (SiGe) integrated circuit (IC). Two variants of a 64-Gb/s optical receiver (ORX) …

[PDF][PDF] 基于硅基三维集成技术的W 频段有源相控阵微系统

杨驾鹏, 周骏, 曹志翔, 孟洪福, 沈亚 - 电子学报, 2023 - ejournal.org.cn
本文基于硅基三维集成技术, 提出了一种高集成度低剖面的W 频段有源相控阵微系统.
将阵列划分为若干个2× 4 单元的W 频段相控阵子阵微系统. 每个子阵微系统采用了三维布局 …