We present a comprehensive overview of the optical properties of zinc-blende GaN. By a
variety of different methods, such as temperature-dependent photoluminescence …

In this work, GaN films were grown on three-inch silicon substrates by plasma-assisted
molecular beam epitaxy (PAMBE) with AlN (about 200nm) as the buffer layer. Finally, a thin …

In dieser Arbeit wurden grundlegende optische Eigenschaften von AlN, GaN und ihren
Mischkristallen vorgestellt und interpretiert. Spektrale Ellipsometrie in einem ausgedehnten …

Cubic GaN with different low‐temperature buffer layers were grown on 3C‐SiC (100)
substrates by metalorganic vapor phase epitaxy (MOVPE). The sample surface morphology …

The optical properties of cubic GaN epitaxial layers were investigated by modulated
photoreflectance (PR) and photoluminescence in the temperature interval from 5 to 300K …

Extensive research has been reported on the wide band gap nitride materials system in the
past few years. Despite the development of many well‐working GaN based opto‐and …

The cubic phase of III‐nitrides has received much less attention than the hexagonal
structure, because of difficulties inherent to the growth of this meta‐stable phase. However …

Cubic phase group III‐nitrides were grown using RF plasma assisted Molecular Beam
Epitaxy on GaAs (001) substrates. High‐resolution X‐ray diffraction, photoluminescence …

GaN-based or the III-V nitrides materials are wide band gap semiconductor materials with
dormant utilizations in optoelectronic as well as in electronic devices operating at high …

In this work fundamental optical properties of AlN, GaN and their alloys are presented.
Spectroscopic ellipsometry from the near infrared (NIR) to the vacuum-ultraviolet (VUV) …