Photon emission from Si p‐channel MOS field‐effect transistor (PMOSFET) having 6‐μm
effective gate length that is operated as a three‐terminal gate‐controlled light‐emitting diode …

Revised and expanded for this new edition, Smart CMOS Image Sensors and Applications,
Second Edition is the only book available devoted to smart CMOS image sensors and …

Abstract Development work was conducted on N+ PN+ PN+ Poly silicon light-emitting
devices which are compatible with silicon-based integrated circuit technology. We discuss …

This paper studies integrated silicon light emitter implemented in standard CMOS
technologies. A new MOS-like structure utilizing deep p-well is presented, and compared …

The motivation of this study is to develop ap–n junction based light emitting device, in which
the light emission is conventionally realized using reverse current driving, by voltage driving …

In this paper, we discuss the emission of visible light by a monolithically integrated silicon
gate-controlled diode with the pn junction reverse-biased. Since the MOS-like diode utilizes …

New research results with regard to two-and three-terminal Si-LEDs realized in a silicon
MOS-like device fabricated using the CMOS process technology are presented. Since in the …

By the standard Si-CMOS process, several designs are investigated of low-operating-
voltage light-emitting/receiving devices. Our forward-biasing Si-LED designs having power …

A silicon light-emitting device is designed and realized in standard 3-μ m complementary
metal oxide semiconductor (CMOS) integrated circuitry. Accordingly, it can be integrated …

Microdisplay technologies for near-to-eye applications mostly use a complementary metal-
oxide semiconductor (CMOS) processing chip as backplane for pixel addressing, with …