Ultrawide bandgap ferroelectric nitride semiconductors have shown promising applications
in electronic, micromechanical, and optical devices. Current studies, however, have largely …

The hafnium-zirconium oxide (HZO) has been reported to be a promising candidate for low-
power VLSI logic and memory applications. However, the demand for high processing …

The metastable nature of the ferroelectric phase of HfO2 is a significant impediment to its
industrial application as a functional ferroelectric material. In fact, no polar phases exist in …

Investigations on fluorite-structured ferroelectric HfO2/ZrO2 thin films are aiming to achieve
high-performance films required for memory and computing technologies. These films …

We have developed and experimentally demonstrated anti-ferroelectric (AFE) ZrO2
capacitors with operating voltage () lower than 1.2 V while maintaining sufficient memory …

The ferroelectric tunnel junction (FTJ), which possesses a simple structure, low power
consumption, high operation speed, and nondestructive reading, has attracted great …

In this study, we integrated an Indium Gallium Zinc Oxide (IGZO) channel with a superlattice
of HfO 2/ZrO 2 (HZO) under low-thermal-budget microwave annealing to produce nearly …

Hybrid improper ferroelectrics (HIFs), characterized by ferroelectric polarization arising from
the rotation of two symmetry inequivalent antiferrodistortive modes, exhibit exotic properties …

In this study, Nd: HfO2 thin films with or without the Hf0. 5Zr0. 5O2 (HZO) interlayer were
prepared on Pt/Ti/SiO2/Si substrates by the chemical solution deposition (CSD) method. It …

The superior dielectric and ferroelectric properties of HfO 2-based thin films, coupled with
excellent silicon compatibility, position them as highly attractive candidates for dynamic and …