[HTML][HTML] Ultrawide bandgap semiconductors
Ultrawide bandgap (UWBG) semiconductors, with energy bandgaps (> 4 eV), much wider
than the conventional wide bandgap (WBG) of GaN (3.4 eV) and SiC (3.2 eV), represent an …
than the conventional wide bandgap (WBG) of GaN (3.4 eV) and SiC (3.2 eV), represent an …
Surface recombinations in III-nitride micro-LEDs probed by photon-correlation cathodoluminescence
S Finot, C Le Maoult, E Gheeraert, D Vaufrey… - ACS …, 2021 - ACS Publications
III-Nitride micro-LEDs are promising building blocks for the next generation of high
performance microdisplays. To reach a high pixel density, it is desired to achieve micro …
performance microdisplays. To reach a high pixel density, it is desired to achieve micro …
UV-A Flexible LEDs Based on Core–Shell GaN/AlGaN Quantum Well Microwires
N Amador-Mendez, FM Kochetkov… - … Applied Materials & …, 2024 - ACS Publications
Nanostructured ultraviolet (UV) light sources represent a growing research field in view of
their potential applications in wearable optoelectronics or medical treatment devices. In this …
their potential applications in wearable optoelectronics or medical treatment devices. In this …
UV-A to UV-B electroluminescence of core-shell GaN/AlGaN wire heterostructures
Core-shell GaN/AlGaN multiple quantum wells (MQWs) embedded in ap–n junction are
integrated on the upper part of GaN microwires grown by silane-assisted metal organic …
integrated on the upper part of GaN microwires grown by silane-assisted metal organic …
Time-resolved cathodoluminescence in an ultrafast transmission electron microscope
Ultrafast transmission electron microscopy (UTEM) combines sub-picosecond time-
resolution with the versatility of TEM spectroscopies. It allows us to study the ultrafast …
resolution with the versatility of TEM spectroscopies. It allows us to study the ultrafast …
M-plane AlGaN digital alloy for microwire UV-B LEDs
The growth of non-polar AlGaN digital alloy (DA) is achieved by metal-organic vapor phase
epitaxy using GaN microwire m-facets as the template. This AlGaN DA consisting of five …
epitaxy using GaN microwire m-facets as the template. This AlGaN DA consisting of five …
Toward Crack-Free Core–Shell GaN/AlGaN Quantum Wells
Strain relaxation of nonpolar GaN/Al0. 6Ga0. 4N multiple quantum wells grown in core–shell
geometry by metal–organic vapor-phase epitaxy on GaN wires is investigated. Cracking …
geometry by metal–organic vapor-phase epitaxy on GaN wires is investigated. Cracking …
AlGaN microfins as nonpolar UV emitters probed by time-resolved cathodoluminescence
Despite the continuous technological progress and recent commercialization of UV light
emitting diodes for sterilization and disinfection applications, the performance of solid-state …
emitting diodes for sterilization and disinfection applications, the performance of solid-state …
Low-Leakage Current Core–Shell AlGaN Nanorod LED Device Operating in the Ultraviolet-B Band
Despite the considerable potential of AlGaN-based ultraviolet-B light-emitting diodes (UV-B
LEDs) in various applications such as phototherapy, UV curing, plant growth, and analytical …
LEDs) in various applications such as phototherapy, UV curing, plant growth, and analytical …
Etching of the SiGaxNy Passivation Layer for Full Emissive Lateral Facet Coverage in InGaN/GaN Core–Shell Nanowires by MOVPE
To strongly enhance the vertical growth rate in MOVPE-grown GaN core–shell wires, large
quantities of silane (SiH4) need to be introduced for the growth of the wire core. This results …
quantities of silane (SiH4) need to be introduced for the growth of the wire core. This results …