In recent years, the continuous development of magnetic nanostructures (MNSs) has
tremendously promoted both fundamental scientific research and technological applications …

Nanoscale magnetic tunnel junctions play a pivotal role in magnetoresistive random access
memories. Successful implementation depends on a simultaneous achievement of low …

Materials with perpendicular magnetic anisotropy (PMA) are being investigated for magnetic
random access memory (MRAM) and other spintronics applications. This article is an …

Conversion of charge current into pure spin current and vice versa in non-magnetic
semiconductors,,,, or metals,,, which are called the direct and inverse spin Hall …

We review recent developments in magnetic tunnel junctions with perpendicular easy axis
(p-MTJs) for nonvolatile very large scale integrated circuits (VLSIs). So far, a number of …

This paper provides an in-depth review of the magnetoresistive random access memory
technology and its developments over the past decade. Both the traditional field-driven and …

Spin transfer (ST) switching in the Tb Co Fe∕ Co Fe B∕ Mg O∕ Co Fe B∕ Tb Co Fe
magnetic tunnel junction (MTJ) was studied. The Tb Co Fe∕ Co Fe B free layer with a large …

We report on epitaxial growth and magnetic properties of Mn 2.5 Ga thin films, which were
deposited on Cr/MgO single crystal substrates by magnetron sputtering. X-ray diffraction …

Methods of fabricating MTJ arrays using two orthogonal line patterning steps are described.
Embodiments are described that use a self-aligned double patterning method for one or …

6,365,419 B1 4/2002 Durlam et a1. 6,421,270 B1 7/2002 Tai sub-layer formed on top of the
bottom electrode, a nano current-channel (NCC) layer formed on top of the? rst free sub …