A review of ion beam induced charge microscopy

MBH Breese, E Vittone, G Vizkelethy… - Nuclear Instruments and …, 2007 - Elsevier
Since its development in the early 1990's, ion beam induced charge (IBIC) microscopy has
found widespread applications in many microprobe laboratories for the analysis of …

Solid state quantum computer development in silicon with single ion implantation

T Schenkel, A Persaud, SJ Park, J Nilsson… - Journal of Applied …, 2003 - pubs.aip.org
Spawned by the finding of efficient quantum algorithms, the development of a scalable
quantum computer has emerged as a premiere challenge for nanoscience and …

Controlled shallow single-ion implantation in silicon using an active substrate for sub-20‐keV ions

DN Jamieson, C Yang, T Hopf, SM Hearne… - Applied Physics …, 2005 - pubs.aip.org
We demonstrate a method for the controlled implantation of single ions into a silicon
substrate with energy of sub-20‐keV⁠. The method is based on the collection of electron …

Unintended filtering in a typical photodiode detection system for optical tweezers

K Berg-Sørensen, L Oddershede, EL Florin… - Journal of applied …, 2003 - pubs.aip.org
Photodiode based detection systems are used in a number of modern techniques, ranging
from detection of the position of the laser beam in atomic force microscopes, 1, 2 over …

Power spectrum analysis for optical tweezers. II: Laser wavelength dependence of parasitic filtering, and how to achieve high bandwidth

K Berg-Sørensen, EJG Peterman, T Weber… - Review of scientific …, 2006 - pubs.aip.org
In a typical optical tweezers detection system, the position of a trapped object is determined
from laser light impinging on a quadrant photodiode. When the laser is infrared and the …

Ion microbeam studies of charge transport in semiconductor radiation detectors with three-dimensional structures: an example of LGAD

M Jakšić, A Crnjac, G Kramberger, M Manojlović… - Frontiers in …, 2022 - frontiersin.org
The development of semiconductor detectors with an increased tolerance to high radiation
levels often results in devices that deviate significantly from those of the classical design with …

Progress in silicon-based quantum computing

RG Clark, R Brenner, TM Buehler… - … of the Royal …, 2003 - royalsocietypublishing.org
We review progress at the Australian Centre for Quantum Computer Technology towards the
fabrication and demonstration of spin qubits and charge qubits based on phosphorus donor …

Semiconductor characterization by scanning ion beam induced charge (IBIC) microscopy

E Vittone - International Scholarly Research Notices, 2013 - Wiley Online Library
The ion beam induced charge (IBIC) technique is a scanning microscopy technique which
uses finely focused MeV ion beams as probes to measure and image the transport …

LET dependence of the charge collection efficiency of silicon microdosimeters

IM Cornelius, AB Rosenfeld, R Siegele… - IEEE Transactions on …, 2003 - ieeexplore.ieee.org
A heavy ion microprobe was used to conduct ion beam induced charge (IBIC) collection
imaging of silicon microdosimeters. The GEANT4 Monte Carlo toolkit was used to simulate …

Simulation of the response of a PIPS detector using GEANT4 code

JA Díaz-Francés, MA Cortés-Giraldo… - Nuclear Instruments and …, 2017 - Elsevier
The main objective of this work is to simulate a PIPS (Passivated Implanted Planar Silicon)
detector response by Monte Carlo method and its validation with experimental results …