A review of short circuit performance in 650 V power devices: SiC MOSFETs, silicon super-junction MOSFETs, SiC cascode JFETs, silicon MOSFETs and silicon IGBTs
Using measurements, a comprehensive analysis is performed on the short circuit (SC)
performance and robustness of 650V power devices including SiC MOSFETs, SiC Cascode …
performance and robustness of 650V power devices including SiC MOSFETs, SiC Cascode …
Power converters coolant: past, present, future, and a path toward active thermal control in electrified ship power systems
Power converters have widespread applications in automotive, renewables, and power
systems. The demand for power modules with low power consumption and high efficiency …
systems. The demand for power modules with low power consumption and high efficiency …
Junction Temperature Extraction for Silicon Carbide Power Devices: A Comprehensive Review
The complete replacement of silicon devices with silicon carbide (SiC) devices still faces
many reliability challenges considering higher cost, higher junction temperature, and its …
many reliability challenges considering higher cost, higher junction temperature, and its …
Current sharing of parallel sic mosfets under short circuit conditions
Device-to-device parametric variations (eg threshold voltage V TH, gate resistance RG and
junction temperature TJ) can cause variations in the short-circuit currents conducted through …
junction temperature TJ) can cause variations in the short-circuit currents conducted through …
Performance of parallel connected sic mosfets under short circuits conditions
This paper investigates the impact of parameter variation between parallel connected SiC
MOSFETs on short circuit (SC) performance. SC tests are performed on parallel connected …
MOSFETs on short circuit (SC) performance. SC tests are performed on parallel connected …
Time-dependent degradation mechanism of 1.2 kV SiC MOSFET under long-term high-temperature gate bias stress
Y Shen, Z He, Y Shi, H Niu, Y Chen… - … on Electron Devices, 2022 - ieeexplore.ieee.org
This work investigates the degradation mechanism of 1.2 kV silicon carbide (SiC) metal
oxide semiconductor field-effect transistor (MOSFET) under positive or negative long-term …
oxide semiconductor field-effect transistor (MOSFET) under positive or negative long-term …
A junction temperature and package aging decoupling evaluating method for SiC MOSFETs based on the turn-on drain-source current overshoot
Junction temperature and package aging levels are key factors related to the reliability of
SiC metal oxide semiconductor field effect transistors (mosfet s). Many methods have been …
SiC metal oxide semiconductor field effect transistors (mosfet s). Many methods have been …
On-line Temperature Measurement Method for SiC MOSFET Device based on Gate Pulse
In this article, a new online temperature measurement method for silicon carbide power
metal–oxide–semiconductor field-effect transistors (mosfet s) is proposed that uses the …
metal–oxide–semiconductor field-effect transistors (mosfet s) is proposed that uses the …
Challenges of Junction Temperature Calibration of SiC MOSFETs for Power Cycling–a Dynamic Approach
J Breuer, F Dresel, A Schletz, J Klier… - CIPS 2024; 13th …, 2024 - ieeexplore.ieee.org
For thermal impedance measurement (Zth) and power cycle testing (PCT) of semiconductor
power packages, a precise measurement of the junction temperature is essential and critical …
power packages, a precise measurement of the junction temperature is essential and critical …
Third Quadrant Operation of SiC MOSFETs: Comprehensive Analysis and Condition Monitoring Solution
To achieve higher power density at a reduced cost, it is more advantageous to utilize the
inherent body diode found in silicon carbide MOSFETs (SiC MOSFETs) rather than relying …
inherent body diode found in silicon carbide MOSFETs (SiC MOSFETs) rather than relying …