Area-Selective Atomic Layer Deposition of ZnO on Si\SiO2 Modified with Tris(dimethylamino)methylsilane

B Moeini, TG Avval, HH Brongersma, S Průša, P Bábík… - Materials, 2023 - mdpi.com
Delayed atomic layer deposition (ALD) of ZnO, ie, area selective (AS)-ALD, was successfully
achieved on silicon wafers (Si\SiO2) terminated with tris (dimethylamino) methylsilane …

[PDF][PDF] Pr uša

B Moeini, TG Avval, HH Brongersma - Appl. Surf. Sci, 2020 - academia.edu
Delayed atomic layer deposition (ALD) of ZnO, ie, area selective (AS)-ALD, was successfully
achieved on silicon wafers (Si\SiO2) terminated with tris (dimethylamino) methylsilane …