Spintronic devices: a promising alternative to CMOS devices

P Barla, VK Joshi, S Bhat - Journal of Computational Electronics, 2021 - Springer
The field of spintronics has attracted tremendous attention recently owing to its ability to offer
a solution for the present-day problem of increased power dissipation in electronic circuits …

Recent progress in voltage control of magnetism: Materials, mechanisms, and performance

C Song, B Cui, F Li, X Zhou, F Pan - Progress in Materials Science, 2017 - Elsevier
Voltage control of magnetism (VCM) is attracting increasing interest and exciting significant
research activity driven by its profound physics and enormous potential for application. This …

The skyrmion switch: turning magnetic skyrmion bubbles on and off with an electric field

M Schott, A Bernand-Mantel, L Ranno, S Pizzini… - Nano …, 2017 - ACS Publications
Nanoscale magnetic skyrmions are considered as potential information carriers for future
spintronics memory and logic devices. Such applications will require the control of their local …

[HTML][HTML] Ultra-low switching energy and scaling in electric-field-controlled nanoscale magnetic tunnel junctions with high resistance-area product

C Grezes, F Ebrahimi, JG Alzate, X Cai… - Applied Physics …, 2016 - pubs.aip.org
We report electric-field-induced switching with write energies down to 6 fJ/bit for switching
times of 0.5 ns, in nanoscale perpendicular magnetic tunnel junctions (MTJs) with high …

Sub-volt switching of nanoscale voltage-controlled perpendicular magnetic tunnel junctions

Y Shao, V Lopez-Dominguez, N Davila, Q Sun… - Communications …, 2022 - nature.com
Magnetic random-access memory (MRAM) based on voltage-controlled magnetic anisotropy
in magnetic tunnel junctions (MTJs) is a promising candidate for high-performance …

Gate-controlled skyrmion and domain wall chirality

CE Fillion, J Fischer, R Kumar, A Fassatoui… - Nature …, 2022 - nature.com
Magnetic skyrmions are localized chiral spin textures, which offer great promise to store and
process information at the nanoscale. In the presence of asymmetric exchange interactions …

Electric-field control of field-free spin-orbit torque switching via laterally modulated Rashba effect in Pt/Co/AlOx structures

MG Kang, JG Choi, J Jeong, JY Park, HJ Park… - Nature …, 2021 - nature.com
Spin-orbit coupling effect in structures with broken inversion symmetry, known as the
Rashba effect, facilitates spin-orbit torques (SOTs) in heavy metal/ferromagnet/oxide …

Ionic liquid gating control of RKKY interaction in FeCoB/Ru/FeCoB and (Pt/Co)2/Ru/(Co/Pt)2 multilayers

Q Yang, L Wang, Z Zhou, L Wang, Y Zhang… - Nature …, 2018 - nature.com
To overcome the fundamental challenge of the weak natural response of antiferromagnetic
materials under a magnetic field, voltage manipulation of antiferromagnetic interaction is …

Reconfigurable Physically Unclonable Functions Based on Nanoscale Voltage‐Controlled Magnetic Tunnel Junctions

Y Shao, N Davila, F Ebrahimi, JA Katine… - Advanced Electronic …, 2023 - Wiley Online Library
With the fast growth of the number of electronic devices on the internet of things (IoT),
hardware‐based security primitives such as physically unclonable functions (PUFs) have …

Electrical control of the exchange spring in antiferromagnetic metals

Y Wang, X Zhou, C Song, Y Yan, S Zhou… - Advanced …, 2015 - Wiley Online Library
DOI: 10.1002/adma. 201405811 because of the screening effect by the surface charge.
Generally, the manipulation is confined to a limited depth of atomic dimensions, which is …