Two-dimensional materials (2DMs) have attracted tremendous research interest over the
last two decades. Their unique optical, electronic, thermal, and mechanical properties make …

As transistor gate lengths are scaled towards the 10-nm range, thermal device design is
becoming an important part of microprocessor engineering. Decreasing dimensions lead to …

A six-band k⋅ p model has been used to study the mobility of holes in Si inversion layers for
different crystal orientations, for both compressive or tensile strain applied to the channel …

We present a theoretical study of electron mobility in cylindrical gated silicon nanowires at
300 K based on the Kubo-Greenwood formula and the self-consistent solution of the …

A rigorous surface-roughness scattering model for ultrathin-body silicon-on-insulator (SOI)
MOSFETs is derived, which reduces to Ando's model in the limit of bulk MOSFETs. The …

As CMOS transistor gate lengths are scaled below 45 nm, thermal device design is
becoming an important part of microprocessor engineering. Decreasing dimensions lead to …

In this paper, we have extensively investigated the silicon thickness dependence of the low
field electron mobility in ultrathin silicon-on-insulator (UT-SOI) MOSFETs operated both in …

This paper discusses self-heating (SHE) effects in silicon-on-insulator (SOI) CMOS
technology and applies device simulation to analyze the impact of thermal effects on the …

A simple model that links MOSFET performance, in the form of intrinsic switch delay, to
effective carrier velocity in the channel is developed and fitted to historical data. It is shown …

In this paper, and in Part II, Monte Carlo (MC) simulations including quantum corrections to
the potential and calibrated scattering models are used to study electronic transport in bulk …