Atomic layer deposition (ALD) is a vapor phase technique capable of producing thin films of
a variety of materials. Based on sequential, self-limiting reactions, ALD offers exceptional …

We report scaled Ge p-channel FinFETs fabricated on a 300-mm Si wafer using the aspect-
ratio-trapping technique. For long-channel devices, a combination of a trap-assisted …

Germanium–tin (GeSn) p-channel fin field-effect transistor (p-FinFET) was realized on a
novel GeSn-on-insulator (GeSnOI) substrate. The high-quality GeSnOI substrate was formed …

We demonstrate scaled, replacement gate high-k/metal gate p-channel Ge FinFETs
integrated onto 300mm Si wafers for which the best device shows record peak gm, ext= 2.7 …

In this article, we have evaluated the merits of monolithically cointegrated alternate channel
complementary metal-oxide-semiconductor (CMOS) device architecture, utilizing tensile …

In this paper, we study and compare Si versus Ge pMOS FinFETs at advanced node
dimensions using ensemble Monte Carlo simulations. It is found that due to large external …

To maintain semiconductor device scaling, in recent years industry has been forced to move
from planar to non-planar device architectures. This alone has created the need to develop …

In this work, a comprehensive drain current model has been developed for long channel
Negative Capacitance Germanium Double Gate p-type Field Effect Transistor (NCGe-DG-p …

Atomistic tight-binding calculations show that two-dimensional topological insulators can be
obtained using Ge or Ge/Si nanotechnologies. The strong quantum confinement is used to …

An SF 6/CF 4 cyclic reactive-ion etching (RIE) method is proposed to suppress the surface
roughness and to optimize the morphology of Ge fin, aiming at the fabrication of superior Ge …