III-nitride semiconductor lasers grown on Si
M Feng, J Liu, Q Sun, H Yang - Progress in Quantum Electronics, 2021 - Elsevier
III-nitride semiconductor laser directly grown on Si is a potential on-chip light source for Si
photonics. Moreover, it may greatly lower the manufacture cost of laser diodes and further …
photonics. Moreover, it may greatly lower the manufacture cost of laser diodes and further …
The 2020 UV emitter roadmap
Solid state UV emitters have many advantages over conventional UV sources. The (Al, In,
Ga) N material system is best suited to produce LEDs and laser diodes from 400 nm down to …
Ga) N material system is best suited to produce LEDs and laser diodes from 400 nm down to …
Current Status of Carbon‐Related Defect Luminescence in GaN
F Zimmermann, J Beyer, C Röder… - … status solidi (a), 2021 - Wiley Online Library
Highly insulating layers are a prerequisite for gallium nitride (GaN)‐based power electronic
devices. For this purpose, carbon doping is one of the currently pursued approaches …
devices. For this purpose, carbon doping is one of the currently pursued approaches …
[HTML][HTML] Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD
In order to understand the influence of dislocations on doping and compensation in Al-rich
AlGaN, thin films were grown by metal organic chemical vapor deposition (MOCVD) on …
AlGaN, thin films were grown by metal organic chemical vapor deposition (MOCVD) on …
[HTML][HTML] High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing
We demonstrate high p-type conductivity and hole concentrations> 10 18 cm− 3 in Mg-
implanted GaN. The implantation was performed at room temperature and by post …
implanted GaN. The implantation was performed at room temperature and by post …
Status of the growth and fabrication of AlGaN-based UV laser diodes for near and mid-UV wavelength
In this article, the development of mid-UV laser diodes based on the AlGaN materials system
is reviewed. The targeted wavelength for these lasers covers the range from 200 to 350 nm …
is reviewed. The targeted wavelength for these lasers covers the range from 200 to 350 nm …
Efficiency improvement of AlGaN-based deep-ultraviolet light-emitting diodes and their virus inactivation application
Y Saito, S Wada, K Nagata, H Makino… - Japanese Journal of …, 2021 - iopscience.iop.org
AlGaN-based ultraviolet light-emitting diodes (UV-LEDs) are key components for the
inactivation of viruses. Highly efficient and high-power UV-LEDs, capable of inactivating …
inactivation of viruses. Highly efficient and high-power UV-LEDs, capable of inactivating …
Preparation of degenerate n-type AlxGa1− xN (0< x≤ 0.81) with record low resistivity by pulsed sputtering deposition
Y Nishikawa, K Ueno, A Kobayashi… - Applied Physics Letters, 2023 - pubs.aip.org
Highly conductive AlGaN alloys hold a great technological potential, wherein the
degenerate n-type doping is key in reducing parasitic resistances in electronic and opto …
degenerate n-type doping is key in reducing parasitic resistances in electronic and opto …
[HTML][HTML] Point defect reduction in MOCVD (Al) GaN by chemical potential control and a comprehensive model of C incorporation in GaN
A theoretical framework that provides a quantitative relationship between point defect
formation energies and growth process parameters is presented. It enables systematic point …
formation energies and growth process parameters is presented. It enables systematic point …
III-nitride nanostructures for high efficiency micro-LEDs and ultraviolet optoelectronics
Microscale visible light emitting diodes (LEDs), as well as LEDs and laser diodes operating
in the mid and deep ultraviolet (UV), have emerged as the frontier of semiconductor …
in the mid and deep ultraviolet (UV), have emerged as the frontier of semiconductor …