Valley-dependent topological phase transition and quantum anomalous valley Hall effect in single-layer RuClBr

H Sun, SS Li, W Ji, CW Zhang - Physical Review B, 2022 - APS
Quantum anomalous valley Hall effect (QAVHE), which combines both the features of QAHE
and AVHE, is both fundamentally intriguing and practically appealing, but is experimentally …

Two-dimensional intrinsic ferrovalley with large valley polarization

HX Cheng, J Zhou, W Ji, YN Zhang, YP Feng - Physical Review B, 2021 - APS
Manipulation of the valley degree of freedom provides a novel paradigm in quantum
information technology. In this work, through first principles calculations, we demonstrate …

Magnetic and ferroelectric manipulation of valley physics in Janus piezoelectric materials

YQ Li, X Zhang, X Shang, QW He, DS Tang… - Nano Letters, 2023 - ACS Publications
The realization of multiferroic materials offers the possibility of multifunctional electronic
device design. However, the coupling between the multiferroicity and piezoelectricity in …

Valley-related multiple Hall effect in monolayer

X Feng, X Xu, Z He, R Peng, Y Dai, B Huang, Y Ma - Physical Review B, 2021 - APS
Two-dimensional materials with valley-related multiple Hall effect are both fundamentally
intriguing and practically appealing for exploring novel phenomena and applications, but …

Large spontaneous valley polarization and anomalous valley Hall effect in antiferromagnetic monolayer

SD Guo, L Zhang, Y Zhang, P Li, G Wang - Physical Review B, 2024 - APS
Superior to ferromagnetic (FM) materials, antiferromagnetic (AFM) materials do not have any
net magnetic moment and are robust to external magnetic perturbation with ultrahigh …

Realizing spontaneous valley polarization and topological phase transitions in monolayer ScX2 (X= Cl, Br, I)

Y Wu, J Tong, L Deng, F Luo, F Tian, G Qin, X Zhang - Acta Materialia, 2023 - Elsevier
Manipulating the valley degree of freedom besides the charge and spin has attracted
increasing interest in fundamental sciences and emerging applications. In this study, the …

Possible electronic state quasi-half-valley metal in a monolayer

SD Guo, YL Tao, HT Guo, ZY Zhao, B Wang, G Wang… - Physical Review B, 2023 - APS
One of the key problems in valleytronics is to realize valley polarization. Ferrovalley
semiconductors and half-valley metals (HVM) have been proposed, which possess intrinsic …

Reversible switching of anomalous valley Hall effect in ferrovalley Janus and the multiferroic heterostructure

RJ Sun, R Liu, JJ Lu, XW Zhao, GC Hu, XB Yuan… - Physical Review B, 2022 - APS
The central issue for practical applications of the anomalous valley Hall effect (AVHE) is the
tunable and nonvolatile nature of the valley splitting. We predict a type of ferrovalley …

Distinct ferrovalley characteristics of the Janus RuClX (X= F, Br) monolayer

Y Ma, Y Wu, J Tong, L Deng, X Yin, L Zhou, X Han… - Nanoscale, 2023 - pubs.rsc.org
Two-dimensional ferrovalley materials should simultaneously possess three characteristics,
that is, a Curie temperature beyond atmospheric temperature, perpendicular magnetic …

Valley-polarized quantum anomalous Hall insulator in monolayer

SD Guo, WQ Mu, BG Liu - 2D Materials, 2022 - iopscience.iop.org
The coexistence of an intrinsic ferrovalley (FV) and nontrivial band topology attracts
intensive interest, both for its fundamental physics and for its potential applications, namely a …