Enhancement-mode GaAs MOSFETs with an In0. 3 Ga0. 7As channel, a mobility of over 5000 cm2/V· s, and transconductance of over 475 μS/μm
We present metal-gate high-k-dielectric enhancement-mode (e-mode) III-V MOSFETs with
the highest reported effective mobility and transconductance to date. The devices employ a …
the highest reported effective mobility and transconductance to date. The devices employ a …
High mobility III-V MOSFETs for RF and digital applications
M Passlack, P Zurcher, K Rajagopalan… - 2007 IEEE …, 2007 - ieeexplore.ieee.org
Developments over the last 15 years in the areas of materials and devices have finally
delivered competitive III-V MOSFETs with high mobility channels. This paper briefly reviews …
delivered competitive III-V MOSFETs with high mobility channels. This paper briefly reviews …
Benchmarking of scaled InGaAs implant-free nanoMOSFETs
The potential performance of n-type implant-free (IF) III-V nanoMOSFETs with an In 0.75 Ga
0.25 As channel is studied using finite-element heterostructure Monte Carlo (MC) and …
0.25 As channel is studied using finite-element heterostructure Monte Carlo (MC) and …
Impact of interface state trap density on the performance characteristics of different III–V MOSFET architectures
The effect of interface state trap density, Dit, on the current–voltage characteristics of four
recently proposed III–V MOSFET architectures: a surface channel device, a flat-band implant …
recently proposed III–V MOSFET architectures: a surface channel device, a flat-band implant …
Monte Carlo Study of Ultimate Channel Scaling in Si and InGaAs Bulk MOSFETs
A detailed analysis of nonequilibrium electron transport in n-type Si and In 0.3 Ga 0.7 As
MOSFETs scaled into ultimate limit of 5-nm gate length is carried out using ensemble Monte …
MOSFETs scaled into ultimate limit of 5-nm gate length is carried out using ensemble Monte …
High Mobility III-V Mosfet Technology
M Passlack, R Droopad, K Rajagopalan… - 2006 IEEE …, 2006 - ieeexplore.ieee.org
In recent years, fundamental interface issues have been overcome and GaAs MOS
technology has advanced to the level of device fabrication. This development has been …
technology has advanced to the level of device fabrication. This development has been …
Simulation Study of Performance for a 20-nm Gate Length InGaAs Implant Free Quantum Well MOSFET
B Benbakhti, A Martinez, K Kalna… - IEEE transactions on …, 2012 - ieeexplore.ieee.org
An nMOSFET for the future high mobility dual-channel CMOS based on anew In 0.53 Ga
0.47 As implant free quantum well architecture is optimized to achieve low leakage and high …
0.47 As implant free quantum well architecture is optimized to achieve low leakage and high …
Design and analysis of the In0. 53Ga0. 47As implant-free quantum-well device structure
The In0. 53Ga0. 47As implant-free quantum-well device architecture is optimized to achieve
low leakage and high transistor performance by using ensemble Monte Carlo and TCAD …
low leakage and high transistor performance by using ensemble Monte Carlo and TCAD …
Monte carlo simulations of ingaas nano-mosfets
The potential performance of sub-50 nm n-type implant free III-V MOSFETs with an In0.
75Ga0. 25As channel is studied using Monte Carlo (MC) device simulations. The simulated …
75Ga0. 25As channel is studied using Monte Carlo (MC) device simulations. The simulated …
Enhancement-Mode GaAs MOSFETs With an Channel, a Mobility of Over 5000 , and Transconductance of Over 475
We present metal-gate high-k-dielectric enhancement-mode (e-mode) III-V MOSFETs with
the highest reported effective mobility and transconductance to date. The devices employ a …
the highest reported effective mobility and transconductance to date. The devices employ a …