Recent progress in GeSn growth and GeSn-based photonic devices

J Zheng, Z Liu, C Xue, C Li, Y Zuo… - Journal of …, 2018 - iopscience.iop.org
The GeSn binary alloy is a new group IV material that exhibits a direct bandgap when the Sn
content exceeds 6%. It shows great potential for laser use in optoelectronic integration …

Recent progress on Ge/SiGe quantum well optical modulators, detectors, and emitters for optical interconnects

P Chaisakul, V Vakarin, J Frigerio, D Chrastina, G Isella… - Photonics, 2019 - mdpi.com
Germanium/Silicon-Germanium (Ge/SiGe) multiple quantum wells receive great attention for
the realization of Si-based optical modulators, photodetectors, and light emitters for short …

23 GHz Ge/SiGe multiple quantum well electro-absorption modulator

P Chaisakul, D Marris-Morini, MS Rouifed, G Isella… - Optics …, 2012 - opg.optica.org
We report on high speed operation of a Ge/SiGe multiple quantum well (MQW) electro-
absorption modulator in a waveguide configuration. 23 GHz bandwidth is experimentally …

[图书][B] Silicon, germanium, and their alloys: growth, defects, impurities, and nanocrystals

G Kissinger, S Pizzini - 2014 - books.google.com
Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these
materials still demand research, eminently in view of the improvement of knowledge on …

Spin and energy relaxation in germanium studied by spin-polarized direct-gap photoluminescence

F Pezzoli, L Qing, A Giorgioni, G Isella, E Grilli… - Physical Review B …, 2013 - APS
Spin orientation of photoexcited carriers and their energy relaxation are investigated in bulk
Ge by studying spin-polarized recombination across the direct band gap. The control over …

Tensile-strained Ge/SiGe quantum-well photodetectors on silicon substrates with extended infrared response

GE Chang, SW Chen, HH Cheng - Optics Express, 2016 - opg.optica.org
We report on tensile-strained Ge/Si_0. 11Ge_0. 89 quantum-well (QW) metal-semiconductor-
metal (MSM) photodetectors on Si substrates. A tensile strain of 0.21% is introduced into the …

Room temperature direct-bandgap electroluminescence from n-type strain-compensated Ge/SiGe multiple quantum wells

Z Liu, W Hu, C Li, Y Li, C Xue, C Li, Y Zuo… - Applied Physics …, 2012 - pubs.aip.org
N-type strain-compensated Ge/Si 0.15 Ge 0.85 multiple quantum wells (MQWs) were grown
on a Si 0.1 Ge 0.9 virtual substrate using ultrahigh vacuum chemical vapor deposition on …

Optical manipulation of the Rashba effect in germanium quantum wells

S Rossi, E Talamas Simola… - Advanced Optical …, 2022 - Wiley Online Library
Abstract The Rashba effect in Ge/Si0. 15Ge0. 85 multiple quantum wells embedded in ap‐i‐
n diode is studied through polarization and time‐resolved photoluminescence. In addition to …

O-band quantum-confined Stark effect optical modulator from Ge/Si0. 15Ge0. 85 quantum wells by well thickness tuning

P Chaisakul, J Frigerio, D Marris-Morini… - Journal of Applied …, 2014 - pubs.aip.org
We report an O-band optical modulator from a Ge/Si 0.15 Ge 0.85 multiple quantum well
(MQW). Strong O-band optical modulation in devices commonly operating within E-band …

High efficiency blue phosphorescent organic light-emitting diodes with a multiple quantum well structure for reduced efficiency roll-off

X Yang, S Zhuang, X Qiao, G Mu, L Wang, J Chen… - Optics …, 2012 - opg.optica.org
Highly efficient blue phosphorescent organic light-emitting diodes (PhOLEDs) with a
multiple quantum well (MQW) structure were investigated. A peak external quantum …