Ion bombardment energy distributions to a grounded substrate in a low pressure, rf induction
plasma source are measured. The plasma source consists of a planar, spiral coil driven at …

A new large-volume microwave plasma source of interest for technological applications has
been developed. An annular waveguide resonator with axial slots on its inner side acts as a …

Electron cyclotron resonance (ECR) plasma reactors are being developed for etching and
deposition of thin films during integrated circuit fabrication. To control critical parameters …

Studies on the propagation of high power microwave and its interaction with a plasma in a
metallic waveguide are carried out. For this we consider the fundamental TE 10 mode that …

We propose to employ the standing-wave pattern of TE mode in a cylindrical waveguide to
form the density bunches during the interaction of microwave and plasma. These bunches …

The authors present an overview of various single-wafer fabrication techniques for
integrated processing of microelectronic devices. Numerous processing modules, sensors …

A review is presented of the emerging field of neutral-species kinetic-energy-enhanced
etching of silicon. As the gate oxide thickness of metal oxide semiconductor field-effect …

Exposure of tungsten to low energy (< 100 eV) helium plasmas at temperatures between
900–1900 K in both laboratory experiments and tokamaks has been shown to cause severe …

Electron cyclotron resonance (ECR) reactors are now being investigated for use in the
plasma processing of semiconductors. The attractive feature of ECR excitation is that high …

Using plasma immersion ion implantation, silicon has been doped with boron in a high-
voltage pulsed microwave multipolar bucket plasma system. Diborane gas (1%) diluted in …