The solid solutions of Ca x Ba 1− x Ga 2 S 4 (x= 0, 0. 1,…, 1) were synthesized by solid-
phase reactions from powder components of CaS, BaS, and Ga2S3. The temperature …

In the title compound, C20H17BrO5S, molecules are connected by intermolecular C—H⋯ S
hydrogen bonds with R22 (10) ring motifs, forming ribbons along the b-axis direction. C—H⋯ …

Real defect structure, growing technology and physical properties of doped GaSe: S crystals
are presented. From comparative experiment on CO2 laser SHG at identical experimental …

n-InSe single crystals were grown by the Bridgman method. Electroluminescence in
undoped and rare-earth-doped (Dy and Er) crystals has been experimentally studied. It has …

In this paper, structural and electrical properties of p-type undoped and Ce-doped (0.1 at%)
GaSe single crystals grown by using modified Bridgman method were investigated. The …

The effect of doping with holmium (Ho) and erbium (Er) rare-earth elements (REE) on the
main parameters and characteristics of photocells based on p-GaSe/n-InSe heterostructures …

Cu2Te single crystal was grown by the Bridgman method. X-ray diffraction (XRD) study of
Cu2Te single crystals in the temperature range of 293–893 K was performed and possible …

Undoped and boron doped InSe single crystals were grown by Bridgman–Stockbarger
technique. The PL properties of undoped, 0.1% and 0.5% boron doped InSe single crystals …

Identification of photonic materials with high infrared transmittance and high nonlinear
optical coefficients is one of the main emphases in material science as a result of the rapid …

Structural and electrical properties of undoped, 0.1%, 0.5% and 1.8% boron doped InSe
single crystals grown by modified Bridgman method have been studied by using XRD …