UV-A Flexible LEDs Based on Core–Shell GaN/AlGaN Quantum Well Microwires

N Amador-Mendez, FM Kochetkov… - … Applied Materials & …, 2024 - ACS Publications
Nanostructured ultraviolet (UV) light sources represent a growing research field in view of
their potential applications in wearable optoelectronics or medical treatment devices. In this …

Strategically Developed Strong Red‐Emitting Oxyfluoride Nanophosphors for Next‐Generation Lighting Applications

M Abraham, KK Thejas, AK Kunti… - Advanced Optical …, 2024 - Wiley Online Library
Red‐emitting nanophosphors have a multirole in improvising the next‐generation
bulk/micro/nano‐level lighting devices, particularly in refining white light quality and device …

[HTML][HTML] Faceting mechanisms of GaN nanopillar under KOH wet etching

L Jaloustre, SS De Mello, S Labau… - Materials Science in …, 2024 - Elsevier
This study presents strategies for achieving GaN pillars with the desired m-(or even a-)
oriented nonpolar facets through a top-down approach that combines plasma etching …

[HTML][HTML] A Comprehensive Review of Group-III Nitride Light-Emitting Diodes: From Millimeter to Micro-Nanometer Scales

X Fan, J Shi, Y Chen, G Miao, H Jiang, H Song - Micromachines, 2024 - mdpi.com
This review describes the development history of group-III nitride light-emitting diodes
(LEDs) for over 30 years, which has achieved brilliant achievements and changed people …

M-plane AlGaN digital alloy for microwire UV-B LEDs

L Valera, V Grenier, S Finot, C Bougerol… - Applied Physics …, 2023 - pubs.aip.org
The growth of non-polar AlGaN digital alloy (DA) is achieved by metal-organic vapor phase
epitaxy using GaN microwire m-facets as the template. This AlGaN DA consisting of five …

Low-Leakage Current Core–Shell AlGaN Nanorod LED Device Operating in the Ultraviolet-B Band

JK Oh, DY Um, B Chandran, SU Kim… - … Applied Materials & …, 2024 - ACS Publications
Despite the considerable potential of AlGaN-based ultraviolet-B light-emitting diodes (UV-B
LEDs) in various applications such as phototherapy, UV curing, plant growth, and analytical …

Organized AlN Nanowire Arrays by Hybrid Approach of Top-Down Processing and MOVPE Overgrowth for Deep UV Emission Devices

L Valera, L Jaloustre, V Reita… - ACS Applied Nano …, 2024 - ACS Publications
The fabrication of organized AlN nanowires with well faceted m-sidewalls is demonstrated,
exhibiting a narrow near-band-edge emission that confirms the high quality of the AlN …

[HTML][HTML] Fabrication of high aspect ratio AlN nanopillars by top-down approach combining plasma etching and wet etching

L Jaloustre, SS De Mello, S Labau… - Materials Science in …, 2024 - Elsevier
This study proposes a top-down approach for fabricating high aspect ratio AlN pillars with m-
oriented nonpolar sidewalls, which will serve as the first building block for the fabrication of …

UV emission from MOVPE nanowire LEDs

C Durand, V Grenier, S Finot, L Valera… - … and Devices XVIII, 2023 - spiedigitallibrary.org
The use of nanowires has recently emerged to go further in the development of nitride UV
LEDs, especially to improve the efficiency or to make micro-sized UV-sources and flexible …

[PDF][PDF] РАЗРАБОТКА И ИССЛЕДОВАНИЕ ФУНКЦИОНАЛЬНЫХ СИЛИКОНОВЫХ МАТЕРИАЛОВ ДЛЯ ГИБКИХ НЕОРГАНИЧЕСКИХ СВЕТОДИОДНЫХ …

РМ Исламова, ИС Мухин - disser.spbu.ru
Полисилоксаны представляют собой полимеры, содержащие чередующиеся атомы
кремния и кислорода в основной цепи, с присоединёнными к каждому атому кремния …