Deep-level defects in gallium oxide
As an ultrawide bandgap semiconductor, gallium oxide (Ga 2 O 3) has superior physical
properties and has been an emerging candidate in the applications of power electronics and …
properties and has been an emerging candidate in the applications of power electronics and …
Deep traps in GaN-based structures as affecting the performance of GaN devices
AY Polyakov, IH Lee - Materials Science and Engineering: R: Reports, 2015 - Elsevier
New developments in theoretical studies of defects and impurities in III-Nitrides as pertinent
to compensation and recombination in these materials are discussed. New results on …
to compensation and recombination in these materials are discussed. New results on …
GaN-based power devices: Physics, reliability, and perspectives
Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the
fabrication of power devices. Among the semiconductors for which power devices are …
fabrication of power devices. Among the semiconductors for which power devices are …
[HTML][HTML] Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy
Deep level optical spectroscopy (DLOS) and deep level transient spectroscopy (DLTS)
measurements performed on Ni/β-Ga 2 O 3 Schottky diodes fabricated on unintentionally …
measurements performed on Ni/β-Ga 2 O 3 Schottky diodes fabricated on unintentionally …
Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor
Understanding the unique properties of ultra-wide band gap semiconductors requires
detailed information about the exact nature of point defects and their role in determining the …
detailed information about the exact nature of point defects and their role in determining the …
Majority and Minority Carrier Traps in NiO/β-Ga2O3 p+-n Heterojunction Diode
Identifying defects/traps is of vital importance for the implementation of high-performance Ga
2 O 3 power devices. In this work, majority and minority carrier traps in beta-gallium oxide …
2 O 3 power devices. In this work, majority and minority carrier traps in beta-gallium oxide …
Impact of carbon on trap states in n-type GaN grown by metalorganic chemical vapor deposition
A Armstrong, AR Arehart, B Moran… - Applied Physics …, 2004 - pubs.aip.org
The effect of excess C incorporation on the deep level spectrum of n-type GaN grown by
metalorganic chemical vapor deposition was investigated. Low-pressure (LP) growth …
metalorganic chemical vapor deposition was investigated. Low-pressure (LP) growth …
Advanced Calculations for Defects in Materials
Advanced Calculations for Defects in Materials Edited by Audrius Alkauskas, Peter Deák,
Jörg Neugebauer, Alfredo Pasquarello, and Chris G. Van de Walle Advanced Calculations …
Jörg Neugebauer, Alfredo Pasquarello, and Chris G. Van de Walle Advanced Calculations …
Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon
The impact of C incorporation on the deep level spectrum of n-type and semi-insulating
GaN: C: Si films grown by rf plasma-assisted molecular-beam epitaxy (MBE) was …
GaN: C: Si films grown by rf plasma-assisted molecular-beam epitaxy (MBE) was …
Current Status of Carbon‐Related Defect Luminescence in GaN
F Zimmermann, J Beyer, C Röder… - … status solidi (a), 2021 - Wiley Online Library
Highly insulating layers are a prerequisite for gallium nitride (GaN)‐based power electronic
devices. For this purpose, carbon doping is one of the currently pursued approaches …
devices. For this purpose, carbon doping is one of the currently pursued approaches …