A review of SiC IGBT: models, fabrications, characteristics, and applications
L Han, L Liang, Y Kang, Y Qiu - IEEE Transactions on Power …, 2020 - ieeexplore.ieee.org
Along with the increasing maturity for the material and process of the wide bandgap
semiconductor silicon carbide (SiC), the insulated gate bipolar transistor (IGBT) representing …
semiconductor silicon carbide (SiC), the insulated gate bipolar transistor (IGBT) representing …
An active voltage balancing control based on adjusting driving signal time delay for series-connected SiC MOSFETs
T Wang, H Lin, S Liu - IEEE Journal of Emerging and Selected …, 2019 - ieeexplore.ieee.org
Limited by low availability, high price, and poor switching performance of high-voltage
power devices, connecting low-voltage devices in series to block much higher voltages is …
power devices, connecting low-voltage devices in series to block much higher voltages is …
Hybrid control strategy to extend the ZVS range of a dual active bridge converter
VM Iyer, S Gulur, S Bhattacharya - 2017 IEEE Applied Power …, 2017 - ieeexplore.ieee.org
This paper presents a hybrid control strategy for a dual active bridge (DAB) based dc-dc
converter which combines the benefits of traditional phase shift and burst mode modulation …
converter which combines the benefits of traditional phase shift and burst mode modulation …
Design and analysis of a bidirectional battery charger
This work proposes the design and analysis of a bidirectional and isolated battery charger
for applications that involve energy storage like UPS or hybrid generation systems …
for applications that involve energy storage like UPS or hybrid generation systems …