The photoconductivity of TlGaSe2 layered single crystals are investigated in the temperature
range 78–300 K. Both the ac-photoconductivity (ac-PC) and the spectral distribution of the …

We have carried out thermally stimulated current measurements on as-grown TlGaS 2
layered single crystals in the temperature range of 10–60 K with various heating rates. We …

The ultrafast nonlinear optical properties of bulk TlGaS_2 crystal, a semiconductor with a
layered structure, are studied by combining intensity dependent transmission, time-resolved …

The optoelectronic and electrical properties of TlGaS2 single crystals have been
investigated by means of room temperature transmittance and reflectance spectral analysis …

The dark electrical conductivity, Hall coefficient, space charge limited current, and
illumination and temperature dependences of the photocurrent of TlGaS 2 single crystals in …

Single crystals of TlGaS2 were prepared by a special modified Bridgman technique and
used to investigate the switching phenomena. The particular interest shown in switching …

The photoconductivity (PC) of TlGaS2 layered single crystals was investigated in the 77−
300 K temperature, 1000− 2500 lx excitation intensity, 10− 25 V applied voltage, and 415 …

The dependence of the absorption coefficient on the photon energy and sample temperature
near the fundamental absorption edge (AE) was investigated for TlGaS2 layered …

TlGaS 2 layered single crystals have been an attractive research interest due to their
convertible characteristics into 2D structure. In the present paper, structural, optical and …

We present an experimental investigation on photocarrier dynamics in a TlGaS2 bulk crystal
and its heterostructures with hexagonal BN and WS2. The samples were obtained by …