The ultra-thin body and ultra-thin buried-oxide (UTBB) Germanium-on-Insulator (GeOI)
substrates have been fabricated by direct wafer bonding and polishing techniques. The Ge …

Ge and GeSn materials have garnered significant attention due to their high carrier mobility
and tunable band structure, making them promising candidates for low-power electronic …

We present a high-performance Ge/Si PIN photodetector that leverages the advanced Ge/Si
hetero-bonding method. The sputtered microcrystalline Ge is utilized as the interlayer, in …

A germanium p-channel Schottky barrier metal–oxide–semiconductor field-effect transistor
(SB-MOSFET) with germanium–platinum Schottky contacts is demonstrated experimentally …

In this work, an easy method for fabricating germanium on insulator (GeOI) was
demonstrated through epitaxy process (the growth of Ge on silicon wafer) …

We report a potential method for the fabrication of Si-based Ge film with low threading
dislocation (TD) density (<; 10 5 cm-2) based on a low-temperature Ge/Si wafer bonding and …

Nitrogen doping in chalcogenide materials represents a promising way for the improvement
of material properties. Indeed, N doping in GeSbTe phase-change alloys have …

We have systematically examined electrical characteristics of ultra-thin body (UTB)(111) Ge-
on-insulator (GOI) n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs) …

HfO 2-based ferroelectric field-effect transistors (FeFETs) are a promising candidate for
multilevel memory manipulation and brain-like computing due to the multi-domain properties …

The effectiveness of (111)-oriented substrates with a flipped method, in which layer transfer
is performed again after the Smart-Cut process, has been proven to significantly enhance …