Temperature-related electronic low-lying states in different shapes In. 1Ga. 9N/GaN double quantum wells under size effects
In this paper, we report the electronic states of hydrogenic impurity in InGaN/GaN double
quantum wells (DQWs) with different shapes using a numerical procedure within the …
quantum wells (DQWs) with different shapes using a numerical procedure within the …
Pressure-related binding energy in (In, Ga) N/GaN double quantum wells under internal composition effects
In the present work, we provide the calculation of the 1s-like binding energy of shallow-
donor impurity in symmetric double coupled quantum wells based on non-polar wurtzite (In …
donor impurity in symmetric double coupled quantum wells based on non-polar wurtzite (In …
Ground-state shallow-donor binding energy in (In, Ga) N/GaN double QWs under temperature, size, and the impurity position effects
R En-Nadir, H El Ghazi, A Jorio… - Journal of Modeling and …, 2021 - journals.aijr.org
In this paper, we study the hydrogen-like donor-impurity binding energy of the ground-state
change as a function of the well width under the effect of temperature, size, and impurity …
change as a function of the well width under the effect of temperature, size, and impurity …
Ground and two low-lying excited states binding energy in (Al, Ga) N/AlN double quantum wells: temperature and electric field effects
In this study, using a numerical method within the effective mass approximation, we
theoretically investigated the effects of temperature and electric field on the binding energy …
theoretically investigated the effects of temperature and electric field on the binding energy …
Efficiency of InN/InGaN/GaN Intermediate-Band Solar Cell under the Effects of Hydrostatic Pressure, In-Compositions, Built-in-Electric Field, Confinement, and …
H Abboudi, H El Ghazi, R En-Nadir… - Nanomaterials, 2024 - mdpi.com
This paper presents a thorough numerical investigation focused on optimizing the efficiency
of quantum-well intermediate-band solar cells (QW-IBSCs) based on III-nitride materials …
of quantum-well intermediate-band solar cells (QW-IBSCs) based on III-nitride materials …
A theoretical study of the effects of electric field, hydrostatic pressure, and temperature on photoionization cross-section of a donor impurity in (Al, Ga) N/AlN double …
The aim of this research is to analyze the influence of various factors on the photo-ionization
cross-section in (Al, Ga) N/AlN double triangular quantum wells. Using the finite difference …
cross-section in (Al, Ga) N/AlN double triangular quantum wells. Using the finite difference …