CMOS Scaling for the 5 nm Node and Beyond: Device, Process and Technology
HH Radamson, Y Miao, Z Zhou, Z Wu, Z Kong, J Gao… - Nanomaterials, 2024 - mdpi.com
After more than five decades, Moore's Law for transistors is approaching the end of the
international technology roadmap of semiconductors (ITRS). The fate of complementary …
international technology roadmap of semiconductors (ITRS). The fate of complementary …
Scalable fabrication of self-assembled GeSn vertical nanowires for nanophotonic applications
In this work, scalable fabrication of self-assembled GeSn vertical nanowires (NWs) based on
rapid thermal annealing (RTA) and inductively coupled-plasma (ICP) dry etching was …
rapid thermal annealing (RTA) and inductively coupled-plasma (ICP) dry etching was …
Improving the short-wave infrared response of strained GeSn/Ge multiple quantum wells by rapid thermal annealing
In this work, the evolution of structural, optical and optoelectronic properties of coherently
strained Ge 0.883 Sn 0.117/Ge multiple quantum wells (MQWs) grown by molecular beam …
strained Ge 0.883 Sn 0.117/Ge multiple quantum wells (MQWs) grown by molecular beam …
Composition and strain effects on Raman vibrational modes of GeSn alloys with Sn contents up to 31% grown by low-temperature molecular beam epitaxy
We study the behavior of Ge–Ge, Ge–Sn, and Sn–Sn vibrational modes in GeSn
semiconductors with Raman Spectroscopy. Raman spectroscopy is a rapid, nanoscale …
semiconductors with Raman Spectroscopy. Raman spectroscopy is a rapid, nanoscale …
Transferable GeSn ribbon photodetectors for high-speed short-wave infrared photonic applications
We experimentally demonstrate a low-cost transfer process of GeSn ribbons to insulating
substrates for short-wave infrared (SWIR) sensing/imaging applications. By releasing the …
substrates for short-wave infrared (SWIR) sensing/imaging applications. By releasing the …
Structural changes in Ge1-xSnx and Si1-x-yGeySnx thin films on SOI substrates treated by pulse laser annealing
O Steuer, D Schwarz, M Oehme, F Bärwolf… - arXiv preprint arXiv …, 2024 - arxiv.org
Ge1-xSnx and Si1-x-yGeySnx alloys are promising materials for future opto-and
nanoelectronics applications. These alloys enable effective band-gap engineering, broad …
nanoelectronics applications. These alloys enable effective band-gap engineering, broad …
Fabrication, characterization and application of Si₁₋ ₓ₋ ᵧGeₓSnᵧ alloys
O Steuer - 2024 - tud.qucosa.de
Abstract (EN) Within the framework of this thesis, the influence of non equilibrium post
growth thermal treatments of ion implanted and epitaxially grown Ge1-xSnx and Si1-x …
growth thermal treatments of ion implanted and epitaxially grown Ge1-xSnx and Si1-x …
[引用][C] Fabrication, characterization and application of Si1-x-yGexSny alloys
BDS Prucnal, Y Georgiev, GPDG Cuniberti, M Helm…