Effect of deposition parameters on surface roughness and consequent electromagnetic performance of capacitive RF MEMS switches: a review
Z Chen, W Tian, X Zhang, Y Wang - Journal of Micromechanics …, 2017 - iopscience.iop.org
Surface roughness seriously affects the electromagnetic performance of capacitive radio
frequency (RF) micro-electromechanical system (MEMS) switches. This review presents the …
frequency (RF) micro-electromechanical system (MEMS) switches. This review presents the …
Influence of oxygen partial pressure on microstructure, optical properties, residual stress and laser induced damage threshold of amorphous HfO2 thin films
HfO 2 thin films were deposited by electron beam evaporation technique at different oxygen
(O 2) partial pressures. The films are characterized using x-ray diffraction, x-ray reflectivity …
(O 2) partial pressures. The films are characterized using x-ray diffraction, x-ray reflectivity …
Structural, optical, and electrical properties of e-beam deposited metamaterials of granular CdSe thin films on glass substrates with a thin buffer layer of HfO2 dielectric
S Pokhriyal, S Biswas, R Prajapati - Materials Chemistry and Physics, 2023 - Elsevier
Structural, optical, and electrical properties of granular thin films of CdSe deposited on HfO 2
dielectric layer are reported. The thin films were deposited on fluorine-doped tin oxide (FTO) …
dielectric layer are reported. The thin films were deposited on fluorine-doped tin oxide (FTO) …
Room-temperature deposition of ferroelectric HfO2-based films by the sputtering method
Ferroelectricity has been demonstrated in epitaxial 7% Y-doped HfO 2 (0.07 YO 1.5–0.93
HfO 2, YHO7) films grown by the RF magnetron sputtering method at room temperature …
HfO 2, YHO7) films grown by the RF magnetron sputtering method at room temperature …
Switching-behavior improvement in HfO2/ZnO bilayer memory devices by tailoring of interfacial and microstructural characteristics
W Zhang, J Lei, Y Dai, X Zhang, L Kang, B Peng… - …, 2022 - iopscience.iop.org
We investigated the effect of top contact interface and microstructural characteristics of the
insulating layers on resistive switching behaviors by fabricating and characterizing the HfO …
insulating layers on resistive switching behaviors by fabricating and characterizing the HfO …
Effects of annealing on quality and stoichiometry of HfO2 thin films grown by RF magnetron sputtering
In this paper, the effects of annealing temperature on HfO 2 thin films prepared by RF
sputtering have been investigated. Thin films of hafnium oxide were deposited using …
sputtering have been investigated. Thin films of hafnium oxide were deposited using …
Study of morphological, physical and mechanical properties of thin NbN films synthesized via DC magnetron sputtering system
B Abdallah, M Kakhia, K Masloub… - World Journal of …, 2024 - emerald.com
Purpose Niobium Nitride (NbN) was interesting material for its applications in the medicinal
tools or tools field (corresponding to saline serum media) as well as in mechanical …
tools or tools field (corresponding to saline serum media) as well as in mechanical …
No‐Heating Deposition of Ferroelectric x%YO1.5–(100−x%)(Hf1−yZry)O2 Films
T Mimura, R Shimura, A Tateyama… - … status solidi (a), 2023 - Wiley Online Library
The no‐heating deposition of x% YO1. 5–(100− x%)(Hf1− yZry) O2 (x= 0− 0.09, y= 0, 0.25,
0.50, and 1) is achieved using a radio‐frequency magnetron sputtering method. To …
0.50, and 1) is achieved using a radio‐frequency magnetron sputtering method. To …
MEMS-based sample carriers for simultaneous heating and biasing experiments: A platform for in-situ TEM analysis
We present the development of a MEMS-based sample carrier to be used for in-situ studies
inside the Transmission Electron Microscope (TEM). This MEMS device, referred to as the …
inside the Transmission Electron Microscope (TEM). This MEMS device, referred to as the …
Investigation of Structural and Electrical Properties of Ta2O5 Thin Films with Sputtering Parameters for Microelectronic Applications
Abstract Tantalum oxide (Ta2O5) thin film is considered as an alternative dielectric layer in
both microelectronics and MEMS devices due to its high dielectric constant, high breakdown …
both microelectronics and MEMS devices due to its high dielectric constant, high breakdown …