Bandgap engineering of two-dimensional semiconductor materials

A Chaves, JG Azadani, H Alsalman… - npj 2D Materials and …, 2020 - nature.com
Semiconductors are the basis of many vital technologies such as electronics, computing,
communications, optoelectronics, and sensing. Modern semiconductor technology can trace …

Tungsten dichalcogenides (WS 2, WSe 2, and WTe 2): materials chemistry and applications

A Eftekhari - Journal of Materials Chemistry A, 2017 - pubs.rsc.org
Tungsten is the heaviest transition metal in the family of common transition metal
dichalcogenides (TMDCs). Despite the essential similarities of TMDCs, the considerable …

Universal mechanical exfoliation of large-area 2D crystals

Y Huang, YH Pan, R Yang, LH Bao, L Meng… - Nature …, 2020 - nature.com
Two-dimensional materials provide extraordinary opportunities for exploring phenomena
arising in atomically thin crystals. Beginning with the first isolation of graphene, mechanical …

Band Alignment and Minigaps in Monolayer MoS2-Graphene van der Waals Heterostructures

D Pierucci, H Henck, J Avila, A Balan, CH Naylor… - Nano …, 2016 - ACS Publications
Two-dimensional layered MoS2 shows great potential for nanoelectronic and optoelectronic
devices due to its high photosensitivity, which is the result of its indirect to direct band gap …

WSe2 2D p‐type semiconductor‐based electronic devices for information technology: Design, preparation, and applications

Q Cheng, J Pang, D Sun, J Wang, S Zhang, F Liu… - InfoMat, 2020 - Wiley Online Library
The pioneering exfoliation of monolayer tungsten diselenide has greatly inspired
researchers toward semiconducting applications. WSe2 belongs to a family of transition …

Many-body effect, carrier mobility, and device performance of hexagonal arsenene and antimonene

Y Wang, P Huang, M Ye, R Quhe, Y Pan… - Chemistry of …, 2017 - ACS Publications
Two-dimensional (2D) semiconductors are very promising channel materials in next-
generation field effect transistors (FETs) due to the enhanced gate electrostatics and smooth …

Visualizing electrostatic gating effects in two-dimensional heterostructures

PV Nguyen, NC Teutsch, NP Wilson, J Kahn, X Xia… - Nature, 2019 - nature.com
The ability to directly monitor the states of electrons in modern field-effect devices—for
example, imaging local changes in the electrical potential, Fermi level and band structure as …

P‐Type 2D Semiconductors for Future Electronics

Y Xiong, D Xu, Y Feng, G Zhang, P Lin… - Advanced …, 2023 - Wiley Online Library
Abstract 2D semiconductors represent one of the best candidates to extend Moore's law for
their superiorities, such as keeping high carrier mobility and remarkable gate‐control …

Probing the Influence of Dielectric Environment on Excitons in Monolayer WSe2: Insight from High Magnetic Fields

AV Stier, NP Wilson, G Clark, X Xu, SA Crooker - Nano letters, 2016 - ACS Publications
Excitons in atomically thin semiconductors necessarily lie close to a surface, and therefore
their properties are expected to be strongly influenced by the surrounding dielectric …

Realizing large-scale, electronic-grade two-dimensional semiconductors

YC Lin, B Jariwala, BM Bersch, K Xu, Y Nie, B Wang… - ACS …, 2018 - ACS Publications
Atomically thin transition metal dichalcogenides (TMDs) are of interest for next-generation
electronics and optoelectronics. Here, we demonstrate device-ready synthetic tungsten …