Mobility analysis of surface roughness scattering in FinFET devices
JW Lee, D Jang, M Mouis, GT Kim, T Chiarella… - Solid-State …, 2011 - Elsevier
This paper presents a mobility analysis of the surface roughness scattering along the
different interfaces of FinFET devices. Using temperature dependent analysis of effective …
different interfaces of FinFET devices. Using temperature dependent analysis of effective …
A simple method for measuring Si-Fin sidewall roughness by AFM
X Tang, V Bayot, N Reckinger, D Flandre… - IEEE Transactions …, 2009 - ieeexplore.ieee.org
The gate oxide reliability and the electrical behavior of FinFETs are directly related to the
surface characteristics of the fin vertical sidewalls. The surface roughness of the fin sidewalls …
surface characteristics of the fin vertical sidewalls. The surface roughness of the fin sidewalls …
Use of SiO2 nanoparticles as etch mask to generate Si nanorods by reactive ion etch
EZ Liang, CJ Huang, CF Lin - … of Vacuum Science & Technology B …, 2006 - pubs.aip.org
Silicon nanorods 20 nm in diameter are fabricated by reactive ion etch (RIE) to study
anisotropy and damage profile in decananometer scale. RIE of gas mixture of SF 6∕ O 2 …
anisotropy and damage profile in decananometer scale. RIE of gas mixture of SF 6∕ O 2 …
Atomic force microscope study of three-dimensional nanostructure sidewalls
MM Hussain, CFH Gondran, DK Michelson - Nanotechnology, 2007 - iopscience.iop.org
Next generation planar and non-planar complementary metal oxide semiconductor (CMOS)
structures are three-dimensional nanostructures with multi-layer stacks that can contain films …
structures are three-dimensional nanostructures with multi-layer stacks that can contain films …
Effects of hydrogen annealing process conditions on nano scale silicon (011) fins
RJ Zaman, W Xiong, R Quintanilla, T Schulz… - MRS Online …, 2005 - cambridge.org
In this paper we present a comprehensive study of the impact of the Hydrogen (H2)
annealing conditions on nano scale silicon fin structures. Hydrogen pressure was varied …
annealing conditions on nano scale silicon fin structures. Hydrogen pressure was varied …
New inline AFM metrology tool suited for LSI manufacturing at the 45-nm node and beyond
M Edamura, Y Kunitomo, T Morimoto… - … Process Control for …, 2007 - spiedigitallibrary.org
A new inline metrology tool utilizing atomic force microscope (AFM) suited for LSI
manufacturing at the 45-nm node and beyond has been developed. The developed AFM is …
manufacturing at the 45-nm node and beyond has been developed. The developed AFM is …
Straightforward method for sidewall roughness measurements by AFM on ion beam etched slanted diffraction gratings and their topography development
P Lima, S Pochon, D Pearson… - Optical Architectures for …, 2024 - spiedigitallibrary.org
The roughness of sidewalls on slanted etched diffraction gratings needs to be minimized to
avoid compromising their optical efficiency. Sidewall roughness usually does not …
avoid compromising their optical efficiency. Sidewall roughness usually does not …
Sampling and reference considerations for very high resolution afm analysis
CFH Gondran, DK Michelson - International Symposium for …, 2004 - dl.asminternational.org
The geometries of several proposed new electronic device structures put constraints on the
size of the AFM images that can be obtained in the gate areas. The images that can be …
size of the AFM images that can be obtained in the gate areas. The images that can be …
[图书][B] A Comprehensive Study of Three-Dimensional Nano Structures Characteristics and Novel Devices
RJ Zaman - 2008 - search.proquest.com
Silicon based 3D fin structure is believed to be the potential future of current semiconductor
technology. However, there are significant challenges still exist in realizing a …
technology. However, there are significant challenges still exist in realizing a …