The fabrication of ultra large-scale integrated (ULSI) circuits with ever shrinking feature size
requires a continued reduction of diffusion lengths of dopants in Si. However, boron implants …

A center from the family of “fourfold coordinated (FFC) defects”, previously predicted
theoretically, has been experimentally identified in crystalline silicon. It is shown that the …

Accommodation of nonstoichiometry in SrTiO 3 pulsed laser deposited (PLD) films was
investigated using positron annihilation lifetime spectroscopy and (scanning) transmission …

Addressing the shape transition of silicon clusters, indicated by mobility experiments on
silicon cluster cations with 24 to 30 atoms, we investigate the structure of low energy neutral …

Using density-functional-theory calculations, we have identified new stable configurations
for tri-, tetra-, and pentavacancies in silicon. These new configurations consist of …

The trivacancy (V 3) in silicon has been recently shown to be a bistable center in the neutral
charge state, with a fourfold-coordinated configuration, V 3 [FFC], lower in energy than the …

We investigate the feasibility of improving the semi-empirical density functional based tight-
binding method through a general and transferable many-body repulsive potential for pure …

In this paper we report on the positron lifetime results obtained for brown and colourless
natural diamond. Optical effects of the observed vacancy defects in brown, high pressure …

Front-end processing mostly deals with technologies associated to junction formation in
semiconductor devices. Ion implantation and thermal anneal models are key to predict …

An artificial-neural-network (ANN) interatomic potential trained with data from density-
functional-theory (DFT) calculations is developed to reveal favorable modes of large-sized …