Low-dimensional lead-free luminescent halides have emerged as highly promising
phosphors for white-light emission. Recently, we reported a broadband blue-emitting copper …

As a promising high mobility p-type wide bandgap semiconductor, copper iodide has
received increasing attention in recent years. However, the defect physics/evolution are still …

Transparent p‐type polycrystalline CuI films with high hole mobility are produced by solid
iodination of Cu3N precursor layers and subsequent heat treatment at 120° C. The hole …

Cuprous iodide (CuI) is a wide bandgap (∼ 3.1 eV) semiconductor of great recent interest
because of its high transparency, high hole conductivity, large exciton binding energy, and …

CuI is one of the promising hole transport materials for perovskite solar cells. However, its
tendency to form defects is currently limiting its use for device applications. Here, we report …

Transparent p‐type conductive γ‐CuI thin films typically exhibit unexpectedly high hole
mobilities in the range of 10 cm2 V− 1 s− 1 even when heavily textured. To explain this …

We report on temperature-dependent (10 K–250 K) spectral and dynamical properties of
free exciton–polariton and bound exciton emission in copper iodide (CuI) bulk single …

We determined the dielectric function of CuI by means of spectroscopic ellipsometry in the
spectral range from 0.6 eV up to 8.3 eV for temperatures from 10 K to 300 K. Features …

We report on photoluminescence emission in copper iodide bulk single crystals induced by
two-and three-photon absorption around 1.525 eV. These non-linear optical processes are …

Carrier and lattice relaxation after optical excitation is simulated for the prototypical wide-
bandgap semiconductors CuI and ZnO. Transient temperature dynamics of electrons, holes …