Integrated quantum photonics with silicon carbide: challenges and prospects

DM Lukin, MA Guidry, J Vučković - PRX quantum, 2020 - APS
Optically addressable solid-state spin defects are promising candidates for storing and
manipulating quantum information using their long coherence ground-state manifold; …

Silicon carbide color centers for quantum applications

S Castelletto, A Boretti - Journal of Physics: Photonics, 2020 - iopscience.iop.org
Silicon carbide has recently surged as an alternative material for scalable and integrated
quantum photonics, as it is a host for naturally occurring color centers within its bandgap …

4H-silicon-carbide-on-insulator for integrated quantum and nonlinear photonics

DM Lukin, C Dory, MA Guidry, KY Yang, SD Mishra… - Nature …, 2020 - nature.com
Optical quantum information processing will require highly efficient photonic circuits to
connect quantum nodes on-chip and across long distances. This entails the efficient …

Wafer-scale nanofabrication of telecom single-photon emitters in silicon

M Hollenbach, N Klingner, NS Jagtap… - Nature …, 2022 - nature.com
A highly promising route to scale millions of qubits is to use quantum photonic integrated
circuits (PICs), where deterministic photon sources, reconfigurable optical elements, and …

Engineering telecom single-photon emitters in silicon for scalable quantum photonics

M Hollenbach, Y Berencén, U Kentsch, M Helm… - Optics …, 2020 - opg.optica.org
We create and isolate single-photon emitters with a high brightness approaching 10^ 5
counts per second in commercial silicon-on-insulator (SOI) wafers. The emission occurs in …

Laser writing of scalable single color centers in silicon carbide

YC Chen, PS Salter, M Niethammer, M Widmann… - Nano …, 2019 - ACS Publications
Single photon emitters in silicon carbide (SiC) are attracting attention as quantum photonic
systems (Awschalom et al. Nat. Photonics 2018, 12, 516− 527; Atatüre et al. Nat. Rev …

Quantum information processing with integrated silicon carbide photonics

S Majety, P Saha, VA Norman… - Journal of Applied Physics, 2022 - pubs.aip.org
Color centers in wide bandgap semiconductors are prominent candidates for solid-state
quantum technologies due to their attractive properties including optical interfacing, long …

Conversion pathways of primary defects by annealing in proton-irradiated -type -SiC

R Karsthof, ME Bathen, A Galeckas, L Vines - Physical Review B, 2020 - APS
The development of defect populations after proton irradiation of n-type 4 H-SiC and
subsequent annealing experiments is studied by means of deep level transient (DLTS) and …

Silicon carbide single-photon sources: challenges and prospects

S Castelletto - Materials for Quantum Technology, 2021 - iopscience.iop.org
The search for an ideal single-photon source (SPS) with superior emission properties is still
at the core of many research efforts in optical quantum technologies and the criteria …

Manipulating Single‐Photon Emission from Point Defects in Diamond and Silicon Carbide

ME Bathen, L Vines - Advanced Quantum Technologies, 2021 - Wiley Online Library
Point defects in semiconductors are emerging as an important contender platform for
quantum technology (QT) applications, showing potential for quantum computing …