Towards Scalable Memristive Hardware for Spiking Neural Networks
P Chen, B Zhang, E He, Y Xiao, F Liu, P Lin… - Materials …, 2025 - pubs.rsc.org
Spiking Neural Network (SNN) represents a promising frontier in artificial intelligence (AI),
offering event-driven, energy-efficient computation that mimics rich neural dynamics in the …
offering event-driven, energy-efficient computation that mimics rich neural dynamics in the …
Programming characteristics of electrochemical random access memory (ECRAM)—Part I: Experimental study
Electrochemical random access memory (ECRAM) based on transition metal oxides is a
promising candidate as a next-generation synaptic device for in-memory computing (IMC) …
promising candidate as a next-generation synaptic device for in-memory computing (IMC) …
Highly Scalable Vertical Bypass RRAM Using Interface-Type Resistive Switching Mechanism for V-Nand Memory Applications
G Han, J Seo, K Lee, D Kim, Y Seo… - … on Electron Devices, 2024 - ieeexplore.ieee.org
In this study, we present a vertical bypass resistive random access memory (VB-RRAM) that
integrates interface-type resistive switching RRAM with excellent memory characteristics for …
integrates interface-type resistive switching RRAM with excellent memory characteristics for …
Mg-Ion-Based Electrochemical Synapse with Superior Retention
H Kang, K Lee, S Hwang… - IEEE Electron Device …, 2024 - ieeexplore.ieee.org
We introduce a novel all-solid-state Mg-ion-based electrochemical RAM (Mg-ECRAM) that
utilizes a highly stable MgF2 electrolyte known for its high ionic conductivity (and low …
utilizes a highly stable MgF2 electrolyte known for its high ionic conductivity (and low …