Two-dimensional materials for next-generation computing technologies
Rapid digital technology advancement has resulted in a tremendous increase in computing
tasks imposing stringent energy efficiency and area efficiency requirements on next …
tasks imposing stringent energy efficiency and area efficiency requirements on next …
Electronics based on two-dimensional materials
The compelling demand for higher performance and lower power consumption in electronic
systems is the main driving force of the electronics industry's quest for devices and/or …
systems is the main driving force of the electronics industry's quest for devices and/or …
Dual-Gated MoS2/WSe2 van der Waals Tunnel Diodes and Transistors
Two-dimensional layered semiconductors present a promising material platform for band-to-
band-tunneling devices given their homogeneous band edge steepness due to their …
band-tunneling devices given their homogeneous band edge steepness due to their …
Tunnel field-effect transistors: Prospects and challenges
The tunnel field-effect transistor (TFET) is considered a future transistor option due to its
steep-slope prospects and the resulting advantages in operating at low supply voltage (V …
steep-slope prospects and the resulting advantages in operating at low supply voltage (V …
Tunnel field-effect transistors: State-of-the-art
H Lu, A Seabaugh - IEEE Journal of the Electron Devices …, 2014 - ieeexplore.ieee.org
Progress in the development of tunnel field-effect transistors (TFETs) is reviewed by
comparing experimental results and theoretical predictions against 16-nm FinFET CMOS …
comparing experimental results and theoretical predictions against 16-nm FinFET CMOS …
2D materials-based nanoscale tunneling field effect transistors: current developments and future prospects
The continuously intensifying demand for high-performance and miniaturized semiconductor
devices has pushed the aggressive downscaling of field-effect transistors (FETs) design …
devices has pushed the aggressive downscaling of field-effect transistors (FETs) design …
Demonstration of L-shaped tunnel field-effect transistors
An L-shaped tunnel FET (TFET), which features band-to-band tunneling (BTBT)
perpendicular to the channel direction, is experimentally demonstrated for the first time. It is …
perpendicular to the channel direction, is experimentally demonstrated for the first time. It is …
A hybrid III–V tunnel FET and MOSFET technology platform integrated on silicon
Tunnel field-effect transistors (TFETs) rely on quantum-mechanical tunnelling and, unlike
conventional metal–oxide–semiconductor field-effect transistors (MOSFETs), require less …
conventional metal–oxide–semiconductor field-effect transistors (MOSFETs), require less …
[图书][B] Fundamentals of tunnel field-effect transistors
During the last decade, there has been a great deal of interest in TFETs. To the best authors'
knowledge, no book on TFETs currently exists. The proposed book provides readers with …
knowledge, no book on TFETs currently exists. The proposed book provides readers with …
Toward attojoule switching energy in logic transistors
Advances in the theory of semiconductors in the 1930s in addition to the purification of
germanium and silicon crystals in the 1940s enabled the point-contact junction transistor in …
germanium and silicon crystals in the 1940s enabled the point-contact junction transistor in …