A review of ultrawide bandgap materials: properties, synthesis and devices
Ultrawide bandgap (UWBG) materials such as diamond, Ga2O3, hexagonal boron nitride (h-
BN) and AlN, are a new class of semiconductors that possess a wide range of attractive …
BN) and AlN, are a new class of semiconductors that possess a wide range of attractive …
High-temperature performance of AlN MESFETs with epitaxially grown n-type AlN channel layers
M Hiroki, Y Taniyasu… - IEEE Electron Device …, 2022 - ieeexplore.ieee.org
We fabricated AlN metal semiconductor field effect transistors (MESFETs) with an epitaxially
grown n-type AlN channel layer and characterized the temperature dependence of their …
grown n-type AlN channel layer and characterized the temperature dependence of their …
The photoresponse behavior of a Schottky structure with a transition metal oxide-doped organic polymer (RuO2:PVC) interface
The RuO2-doped organic polymer composite structure was used as the interface to study
the photodiode properties of a Schottky structure. Some basic electrical and optoelectrical …
the photodiode properties of a Schottky structure. Some basic electrical and optoelectrical …
A possible origin of the large leakage current in ferroelectric Al1− x Sc x N films
J Kataoka, SL Tsai, T Hoshii… - Japanese Journal of …, 2021 - iopscience.iop.org
Leakage current analysis on 50 nm thick ferroelectric Al 0.78 Sc 0.22 N films with TiN
electrodes has been performed. The electron conduction followed Schottky emission with an …
electrodes has been performed. The electron conduction followed Schottky emission with an …
Field cycling behavior and breakdown mechanism of ferroelectric Al0. 78Sc0. 22N films
SL Tsai, T Hoshii, H Wakabayashi… - Japanese Journal of …, 2022 - iopscience.iop.org
The effects of field cycling of Al 0.78 Sc 0.22 N capacitors on ferroelectric properties are
investigated. In the first hundreds of switching cycles, the reduction in the switching voltage …
investigated. In the first hundreds of switching cycles, the reduction in the switching voltage …
[HTML][HTML] Below bandgap photoluminescence of an AlN crystal: Co-existence of two different charging states of a defect center
The below bandgap optical transitions of an aluminum nitride (AlN) crystal grown on a
tungsten (W) substrate by physical vapor transport (PVT) are investigated by below-bandgap …
tungsten (W) substrate by physical vapor transport (PVT) are investigated by below-bandgap …
Analysis of residual thermal stress for AlN crystal growth by PVT
ZY Qin, WL Li, ZH Sun, JH Ji, HL Wu, L Jin - Vacuum, 2023 - Elsevier
The residual thermal stress of AlN grown by the PVT method during the cooling process is
investigated. Firstly, the stress at the AlN interface is evaluated by measuring Raman …
investigated. Firstly, the stress at the AlN interface is evaluated by measuring Raman …
Temperature-dependent electrical characteristics of neutron-irradiated GaN Schottky barrier diodes
Temperature-dependent electrical characteristics were explicitly investigated for a 400-μm
diameter neutron-irradiated (NI) GaN Schottky barrier diode (SBD). Based on CV …
diameter neutron-irradiated (NI) GaN Schottky barrier diode (SBD). Based on CV …
Impact of the interface vacancy on Schottky barrier height for Au/AlN polar interfaces
Schottky barrier heights (SBHs) at the Au/AlN interface are systemically studied by density
functional calculations. Two types of interfaces, including Al-and N-polar interfaces, are …
functional calculations. Two types of interfaces, including Al-and N-polar interfaces, are …
[HTML][HTML] Boosting the photodetection of bulk aluminum nitride crystals-based MSM device through an additional electrode
Aluminum nitride (AlN) exhibits excellent high-temperature resistance, chemical stability,
and a wide bandgap, making it a prime candidate material for deep ultraviolet detectors. In …
and a wide bandgap, making it a prime candidate material for deep ultraviolet detectors. In …