Orientation effects on the specific resistance of copper grain boundaries are studied
systematically with two different atomistic tight-binding methods. A methodology is …

The nonequilibrium Green's function method is often used to predict transport in atomistically
resolved nanodevices and yields an immense numerical load when inelastic scattering on …

Continued scaling of the back-end-of-line copper metalization has shown to significantly
increase the resistivity and decrease the lifetime of interconnects. The primary reason is the …

Achieving historically anticipated improvement in the performance of integrated circuits is
challenging, due to the increasing cost and complexity of the required technologies with …

The persistent advancements made in the scaling and vertical implementation of front-end-
of-line transistors has reached a point where the back-end-of-line metallization has become …

The non-equilibrium Green function (NEGF) method is capable of nanodevice performance
predictions including coherent and incoherent effects. To treat incoherent scattering, carrier …

Quantum-mechanical effects play a major role in the performance of modern electronic
devices. In order to predict the behavior of novel devices, quantum effects are often included …

The improvements in the density of integrated circuits and device performance have been
achieved through a long journey of device downscaling and increase in chip size. The …

Although current augmented, virtual, and mixed reality (AR/VR/MR) systems are facing
advanced and immersive experience in the entertainment industry with countless media …