Review on recent advances in nanostructured transition-metal-sulfide-based electrode materials for cathode materials of asymmetric supercapacitors

Y Gao, L Zhao - Chemical Engineering Journal, 2022 - Elsevier
In the past decades, energy storage devices have drawn widespread attention in diverse
fields including hybrid electric vehicles and smart portable electronics. By taking advantage …

Making clean electrical contacts on 2D transition metal dichalcogenides

Y Wang, M Chhowalla - Nature Reviews Physics, 2022 - nature.com
Abstract 2D semiconductors, particularly transition metal dichalcogenides (TMDs), have
emerged as highly promising for new electronic technologies. However, a key challenge in …

Interaction-and defect-free van der Waals contacts between metals and two-dimensional semiconductors

G Kwon, YH Choi, H Lee, HS Kim, J Jeong, K Jeong… - Nature …, 2022 - nature.com
High Schottky barrier heights at metal–semiconductor junctions due to Fermi-level pinning
can degrade the performance of electronic devices and increase their energy consumption …

Fermi level pinning at electrical metal contacts of monolayer molybdenum dichalcogenides

C Kim, I Moon, D Lee, MS Choi, F Ahmed, S Nam… - ACS …, 2017 - ACS Publications
Electrical metal contacts to two-dimensional (2D) semiconducting transition metal
dichalcogenides (TMDCs) are found to be the key bottleneck to the realization of high device …

Near-ideal van der Waals rectifiers based on all-two-dimensional Schottky junctions

X Zhang, B Liu, L Gao, H Yu, X Liu, J Du, J Xiao… - Nature …, 2021 - nature.com
The applications of any two-dimensional (2D) semiconductor devices cannot bypass the
control of metal-semiconductor interfaces, which can be severely affected by complex Fermi …

Palladium diselenide long-wavelength infrared photodetector with high sensitivity and stability

M Long, Y Wang, P Wang, X Zhou, H Xia, C Luo… - Acs Nano, 2019 - ACS Publications
A long-wavelength infrared photodetector based on two-dimensional materials working at
room temperature would have wide applications in many aspects in remote sensing, thermal …

Ohmic contact engineering for two-dimensional materials

Y Zheng, J Gao, C Han, W Chen - Cell Reports Physical Science, 2021 - cell.com
One of the major areas of semiconductor device research is the development of transparent
or ohmic contacts between semiconductors and metal electrodes for the efficient injection of …

Layered semiconducting 2D materials for future transistor applications

SK Su, CP Chuu, MY Li, CC Cheng… - Small …, 2021 - Wiley Online Library
Down‐scaling of transistor size in the lateral dimensions must be accompanied by a
corresponding reduction in the channel thickness to ensure sufficient gate control to turn off …

Lowering the Schottky Barrier Height by Graphene/Ag Electrodes for High‐Mobility MoS2 Field‐Effect Transistors

SS Chee, D Seo, H Kim, H Jang, S Lee… - Advanced …, 2019 - Wiley Online Library
Abstract 2D transition metal dichalcogenides (TMDCs) have emerged as promising
candidates for post‐silicon nanoelectronics owing to their unique and outstanding …

Low Contact Resistance on Monolayer MoS2 Field-Effect Transistors Achieved by CMOS-Compatible Metal Contacts

Z Sun, SY Kim, J Cai, J Shen, HY Lan, Y Tan, X Wang… - ACS …, 2024 - ACS Publications
Contact engineering on monolayer layer (ML) semiconducting transition metal
dichalcogenides (TMDs) is considered the most challenging problem toward using these …