Abstract 2D semiconductors, particularly transition metal dichalcogenides (TMDs), have emerged as highly promising for new electronic technologies. However, a key challenge in …
High Schottky barrier heights at metal–semiconductor junctions due to Fermi-level pinning can degrade the performance of electronic devices and increase their energy consumption …
Electrical metal contacts to two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDCs) are found to be the key bottleneck to the realization of high device …
X Zhang, B Liu, L Gao, H Yu, X Liu, J Du, J Xiao… - Nature …, 2021 - nature.com
The applications of any two-dimensional (2D) semiconductor devices cannot bypass the control of metal-semiconductor interfaces, which can be severely affected by complex Fermi …
M Long, Y Wang, P Wang, X Zhou, H Xia, C Luo… - Acs Nano, 2019 - ACS Publications
A long-wavelength infrared photodetector based on two-dimensional materials working at room temperature would have wide applications in many aspects in remote sensing, thermal …
Y Zheng, J Gao, C Han, W Chen - Cell Reports Physical Science, 2021 - cell.com
One of the major areas of semiconductor device research is the development of transparent or ohmic contacts between semiconductors and metal electrodes for the efficient injection of …
SK Su, CP Chuu, MY Li, CC Cheng… - Small …, 2021 - Wiley Online Library
Down‐scaling of transistor size in the lateral dimensions must be accompanied by a corresponding reduction in the channel thickness to ensure sufficient gate control to turn off …
SS Chee, D Seo, H Kim, H Jang, S Lee… - Advanced …, 2019 - Wiley Online Library
Abstract 2D transition metal dichalcogenides (TMDCs) have emerged as promising candidates for post‐silicon nanoelectronics owing to their unique and outstanding …
Contact engineering on monolayer layer (ML) semiconducting transition metal dichalcogenides (TMDs) is considered the most challenging problem toward using these …