Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least
studied III-V compound semiconductor and has received steadily increasing attention since …

The exceptional properties of liquid metals at room temperature, such as their fluidity,
stretchability, deformability, and potential applications, have rapidly inspired the scientific …

GaAsBi has been researched as a candidate material for optoelectronic devices for around
two decades. Bi‐induced localized states induce a rapid rising of the valence band edge …

A series of strained GaAsBi/GaAs multiple quantum well diodes are characterised to assess
the potential of GaAsBi for photovoltaic applications. The devices are compared with …

The development of low bandgap GaAsNBi solar cells grown using MBE is reported. The
devices include a pin heterostructure with GaAsNBi as the i-layer. The substrate rotation is …

A comprehensive assessment of the nature of the distribution of sub band-gap energy states
in bulk GaAsBi is presented using power and temperature dependent photoluminescence …

Compositional inhomogeneities in III-V alloys heavily influence the device performance. This
work presents evidence for Ga droplets inducing inhomogeneities in the Bi composition …

The distribution of alloyed atoms in semiconductors often deviates from a random
distribution which can have significant effects on the properties of the materials. In this study …

We report on the spontaneous formation of lateral composition modulations (LCMs) in Ga
(As, Bi) epilayers grown by low-temperature (< 300 C) molecular beam epitaxy (MBE) on …

A systematic series of GaAsBi pin diodes was grown by MBE using different growth
temperatures and Bi fluxes, to study the effect on the structural and opto-electronic …