The nonlinear absorption properties and ultrafast dynamics of pure and boron doped GaSe crystals have been studied by open aperture Z-scan and ultrafast pump probe spectroscopy …
We investigated the nonlinear and saturable absorption characteristics of Ga 0.90 In 0.10 Se and Ga 0.85 In 0.15 Se semiconductor crystals and their very thin amorphous films by open …
M Yüksek, A Elmali, M Karabulut, GM Mamedov - Applied Physics B, 2010 - Springer
Abstract P type-GaSe and 0.01 at% Ge doped GaSe crystal were grown using the conventional Bridgman–Stochbarger method from a stoichiometric mixture of starting …
Abstract Undoped, 0.1 at% Nd and 0.1 at% Pr doped GaSe single crystals were grown by using modified Bridgman method. The nonlinear absorption (NA), second harmonic …
We have investigated the structural and optical properties of bulk GaTe crystal grown by vertical Bridgman method. Two photon absorption (TPA) properties of GaTe crystal have …
M Yüksek, A Elmali, M Karabulut, GM Mamedov - Optical Materials, 2009 - Elsevier
The nonlinear absorption properties of p type 0.5 at% Sn doped GaSe crystal have been studied by using open-aperture Z-scan technique under 1064nm wavelength and 4ns or …
CP Leon, L Kador, KR Allakhverdiev… - Journal of applied …, 2005 - pubs.aip.org
The room-temperature Raman spectra of single crystals of GaSe, GaS, and mixed compounds GaSe 1− x S x with 0.02⩽ x⩽ 0.8 were measured with a HeNe laser in confocal …
D Sharma, P Gaur, BP Malik, N Singh, A Gaur - 2012 - scirp.org
The nonlinear absorption properties of direct (GaN) and indirect (CdI2) band gap crystals have been studied by using an open aperture Z-scan technique under fundamental (1064 …
The linear absorption, nonlinear absorption (NA), second harmonic generation (SHG) and carrier mobilities of undoped and 0.1 at% Dy doped GaSe single crystals grown by modified …