Spectroscopic near-field microscopy using frequency combs in the mid-infrared

M Brehm, A Schliesser, F Keilmann - Optics express, 2006 - opg.optica.org
We introduce a new concept of spectroscopic near-field optical microscopy that records
broad infrared spectra at each pixel during scanning. Two coherent beams with harmonic …

Influence of boron concentration on nonlinear absorption and ultrafast dynamics in GaSe crystals

A Karatay, M Yuksek, H Ertap, AK Mak, M Karabulut… - Optical Materials, 2016 - Elsevier
The nonlinear absorption properties and ultrafast dynamics of pure and boron doped GaSe
crystals have been studied by open aperture Z-scan and ultrafast pump probe spectroscopy …

The nonlinear and saturable absorption characteristics of Ga0. 90In0. 10Se and Ga0. 85In0. 15Se semiconductor crystals and their amorphous thin films

A Karatay, Ç Aksoy, HG Yaglioglu, A Elmali… - Journal of …, 2011 - iopscience.iop.org
We investigated the nonlinear and saturable absorption characteristics of Ga 0.90 In 0.10 Se
and Ga 0.85 In 0.15 Se semiconductor crystals and their very thin amorphous films by open …

Nonlinear absorption in undoped and Ge doped layered GaSe semiconductor crystals

M Yüksek, A Elmali, M Karabulut, GM Mamedov - Applied Physics B, 2010 - Springer
Abstract P type-GaSe and 0.01 at% Ge doped GaSe crystal were grown using the
conventional Bridgman–Stochbarger method from a stoichiometric mixture of starting …

Nonlinear absorption, SHG behavior and carrier dynamics of Nd and Pr doped GaSe single crystals

H Ertap - Optical Materials, 2018 - Elsevier
Abstract Undoped, 0.1 at% Nd and 0.1 at% Pr doped GaSe single crystals were grown by
using modified Bridgman method. The nonlinear absorption (NA), second harmonic …

Two photon absorption characteristics of bulk GaTe crystal

M Yüksek, H Ertap, A Elmali, HG Yaglioglu… - Optics & Laser …, 2012 - Elsevier
We have investigated the structural and optical properties of bulk GaTe crystal grown by
vertical Bridgman method. Two photon absorption (TPA) properties of GaTe crystal have …

Switching from negative to positive nonlinear absorption in p type 0.5 at% Sn doped GaSe semiconductor crystal

M Yüksek, A Elmali, M Karabulut, GM Mamedov - Optical Materials, 2009 - Elsevier
The nonlinear absorption properties of p type 0.5 at% Sn doped GaSe crystal have been
studied by using open-aperture Z-scan technique under 1064nm wavelength and 4ns or …

Comparison of the layered semiconductors GaSe, GaS, and GaSe1− xSx by Raman and photoluminescence spectroscopy

CP Leon, L Kador, KR Allakhverdiev… - Journal of applied …, 2005 - pubs.aip.org
The room-temperature Raman spectra of single crystals of GaSe, GaS, and mixed
compounds GaSe 1− x S x with 0.02⩽ x⩽ 0.8 were measured with a HeNe laser in confocal …

[HTML][HTML] Intensity dependent nonlinear absorption in direct and indirect band gap crystals under nano and picosecond Z-scan

D Sharma, P Gaur, BP Malik, N Singh, A Gaur - 2012 - scirp.org
The nonlinear absorption properties of direct (GaN) and indirect (CdI2) band gap crystals
have been studied by using an open aperture Z-scan technique under fundamental (1064 …

Linear and nonlinear absorption, SHG and photobleaching behaviors of Dy doped GaSe single crystal

H Ertap, M Yuksek, A Karatay, A Elmali… - Chinese Journal of …, 2019 - Elsevier
The linear absorption, nonlinear absorption (NA), second harmonic generation (SHG) and
carrier mobilities of undoped and 0.1 at% Dy doped GaSe single crystals grown by modified …