Advanced nanomaterials are at the core of innovation for the microelectronics industry.
Designing, characterizing, and testing two-terminal devices, such as metal-insulator-metal …

Within the huge perovskite materials family, thin films of highly conducting materials such as
SrMoO3, SrNbO3, and SrVO3 are candidates for low‐loss bottom electrodes in epitaxial all …

In this article, we present the capacitance–voltage (–) characteristics of Hf x Zr 1− x O 2
metal–ferroelectric–metal (MFM) thin-film capacitors with various Zr doping, thicknesses …

This paper presents a comprehensive study and performance analysis of all-oxide thin-film
Au/Pt/Ba 0.5 Sr 0.5 TiO 3/SrMoO 3 varactors with 100 nm Ba 0.5 Sr 0.5 TiO 3 (BST) tunable …

A molecular dynamics simulation approach is applied to investigate thermal expansion of
the lattice parameters and heat capacities of SrMoO 3 and BaMoO 3 perovskite-type …

Thin films of strontium titanate, which reveal high structure quality and tunable properties
prospective for microwave applications at room temperature, were grown on a semi …

Thin films of NaNbO3 were grown on various substrates to investigate the effect of epitaxial
strain on their structural and electrical properties. Reciprocal space maps confirmed the …

Within the huge perovskite materials family, thin films of highly conducting materials such as
SrMoO3, SrNbO3, and SrVO3 are candidates for low-loss bottom electrodes in epitaxial all …

Here we present all-oxide thin film tunable capacitors (varactors) grown epitaxially on silicon
substrates, using a SrTiO 3 buffer layer. In the all-oxide varactors, a highly conducting oxide …

Since the dielectric permittivity of ferroelectric materials depends on the electric field, they
allow designing switchable and continuously tunable devices for adaptive microwave front …