Abstract Vertical three-dimensional (3D) integration is a highly attractive strategy to integrate
a large number of transistor devices per unit area. This approach has emerged to …

The monolithic three-dimensional vertical integration of thin-film transistor (TFT)
technologies could be used to create high-density, energy-efficient and low-cost integrated …

Monolithic three-dimensional (M3D) integration offers a promising solution to the limitations
of silicon (Si) integrated circuits as they reach their physical limits, including problems with …

Wearable bio-sensing devices are considered promising for ubiquitous heath monitoring. To
accurately read out small bio-signals, the development of high-performance flexible front …

P-type tin monoxide (SnO) thin-film phototransistors were developed with high
photoresponsivity of 2.94× 10 5 A/W and high detectivity of 1.82× 10 14 Jones, and these …

This review aims at introducing a vertical integration approach as a promising new driver of
field-effect transistor circuits and systems, which can overcome limitations of flexible and …

Abstract In–Sn–Ga–O (ITGO) thin-film transistors (TFTs) fabricated by atomic layer
deposition (ALD) are promising candidates for widespread semiconductor applications …

We have successfully prepared and structurally characterized a family of eight tin (II)
heteroleptic complexes,[Sn (NR2)(ON)] x (NR2= NMe2 (1a–d) or N (SiMe3) 2 (2a–d); x= 1 or …

In this study, the effects of capping layers with different metals on the electrical performance
and stability of p-channel SnO thin-film transistors (TFTs) were examined. Ni-or Pt-capped …

As the demand and research for electronic devices on flexible and stretchable substrates
gradually continues comparable to the conventional rigid silicon-based electronic devices …