Nonvolatile resistive switching and synaptic characteristics of lead-free all-inorganic perovskite-based flexible memristive devices for neuromorphic systems
Recently, several types of lead halide perovskites have been actively researched for
resistive switching (RS) memory or artificial synaptic devices due to their current–voltage …
resistive switching (RS) memory or artificial synaptic devices due to their current–voltage …
Resistive Switching Memory of TiO2 Nanowire Networks Grown on Ti Foil by a Single Hydrothermal Method
The resistive switching characteristics of TiO 2 nanowire networks directly grown on Ti foil by
a single-step hydrothermal technique are discussed in this paper. The Ti foil serves as the …
a single-step hydrothermal technique are discussed in this paper. The Ti foil serves as the …
[HTML][HTML] Transition Metal Oxide Based Resistive Random-Access Memory: An Overview of Materials and Device Performance Enhancement Techniques
D Yadav, AK Dwivedi, S Verma, DK Avasthi - Journal of Science: Advanced …, 2024 - Elsevier
The emergence of the big data era has led to enormous demand for memory devices that
are low cost, flexible, fabrication friendly, transparent, energy efficient, and have a higher …
are low cost, flexible, fabrication friendly, transparent, energy efficient, and have a higher …
Insight of the high switching window and data retention in lead-free 2D layered double perovskite resistive memory device
Lead-free robust halides double perovskites (DPs) are evolving as the key materials for the
multi-functional resistive memory application. Herein, we aimed to enhance the switching …
multi-functional resistive memory application. Herein, we aimed to enhance the switching …
Significance of polymer matrix on the resistive switching performance of lead-free double perovskite nanocomposite based flexible memory device
D Zhang, S Zhu, J Zeng, H Ma, J Gao, R Yao, Z He - Ceramics International, 2023 - Elsevier
Polymer based resistive switching (RS) is one of the most rapidly growing memory
technology that is being developed for next-generation flexible/wearable devices. In this …
technology that is being developed for next-generation flexible/wearable devices. In this …
Memristive Synapse Based on Single‐Crystalline LiNbO3 Thin Film with Bioinspired Microstructure for Experience‐Based Dynamic Image Mask Generation
J Wang, X Pan, W Luo, Y Shuai, Q Xie… - Advanced Electronic …, 2023 - Wiley Online Library
One of the key steps toward constructing neuromorphic systems is to develop reliable bio‐
realistic synaptic devices. Here, memristors based on single‐crystalline LiNbO3 (SC‐LNO) …
realistic synaptic devices. Here, memristors based on single‐crystalline LiNbO3 (SC‐LNO) …
Ar+ ions irradiation induced memristive behavior and neuromorphic computing in monolithic LiNbO3 thin films
Recently, memristors have attracted considerable attention because of their potential
applications in artificial neural networks which will promote the future development of …
applications in artificial neural networks which will promote the future development of …
Understanding the coexistence of two bipolar resistive switching modes with opposite polarity in CuxO (1 ≤ x ≤ 2)-based two-terminal devices
In this work, we have fabricated and tested the resistive switching behavior of non-volatile
nature in a number of devices with mainly two architectures:(1) W tip/Cu x O/Pt/Ti/SiO 2/Si …
nature in a number of devices with mainly two architectures:(1) W tip/Cu x O/Pt/Ti/SiO 2/Si …
Resistive switching behavior in oxygen ion irradiated TiO2− x films
The room temperature resistive switching behavior in 50 keV O+-ion irradiated TiO 2− x
layers at an ion fluence of 5× 10 16 ions cm− 2 is reported. A clear transformation from …
layers at an ion fluence of 5× 10 16 ions cm− 2 is reported. A clear transformation from …
Resistive switching properties and photoabsorption behavior of Ti ion implanted ZnO thin films
We present photoabsorption (PA) response and resistive switching (RS) behavior of ZnO
thin films that were ion implanted, at many fluences, with 50 keV Ti ions. Photoluminescence …
thin films that were ion implanted, at many fluences, with 50 keV Ti ions. Photoluminescence …