GaN power integration technology and its future prospects
The planar nature of the GaN heterojunction devices provides extended dimensions for
implementing monolithic power integrated circuits. This article presents a comprehensive …
implementing monolithic power integrated circuits. This article presents a comprehensive …
VTH Instability of -GaN Gate HEMTs Under Static and Dynamic Gate Stress
J He, G Tang, KJ Chen - IEEE Electron Device Letters, 2018 - ieeexplore.ieee.org
The impacts of static and dynamic gate stress on the threshold voltage () instability in
Schottky-type-GaN gate AlGaN/GaN heterojunction field-effect transistors are experimentally …
Schottky-type-GaN gate AlGaN/GaN heterojunction field-effect transistors are experimentally …
Gate conduction mechanisms and lifetime modeling of p-gate AlGaN/GaN high-electron-mobility transistors
The gate conduction mechanisms in p-gallium nitride (GaN)/AlGaN/GaN enhancement
mode transistors are investigated using temperature-dependent dc gate current …
mode transistors are investigated using temperature-dependent dc gate current …
Gate leakage mechanisms in normally off p-GaN/AlGaN/GaN high electron mobility transistors
N Xu, R Hao, F Chen, X Zhang, H Zhang… - Applied Physics …, 2018 - pubs.aip.org
In this letter, gate leakage mechanisms in different gate contact normally off p-
GaN/AlGaN/GaN high electron mobility transistors (HEMTs) have been studied by the …
GaN/AlGaN/GaN high electron mobility transistors (HEMTs) have been studied by the …
Identification of trap states in p-GaN layer of a p-GaN/AlGaN/GaN power HEMT structure by deep-level transient spectroscopy
In this work, the deep-level transient spectroscopy (DLTS) is conducted to investigate the
gate stack of the p-GaN gate HEMT with Schottky gate contact. A metal/p-GaN/AlGaN/GaN …
gate stack of the p-GaN gate HEMT with Schottky gate contact. A metal/p-GaN/AlGaN/GaN …
GaN power IC technology on p-GaN gate HEMT platform
GaN power ICs provide an elegant solution for high-frequency power switching applications.
This paper will first discuss the GaN power integration platform, which requires not only a …
This paper will first discuss the GaN power integration platform, which requires not only a …
Gate/drain coupled barrier lowering effect and negative threshold voltage shift in Schottky-type p-GaN gate HEMT
M Nuo, J Wei, M Wang, J Yang, Y Wu… - … on Electron Devices, 2022 - ieeexplore.ieee.org
To assess GaN power transistors' capability to maintain a decent E-mode operation, at high
is measured for Schottky-type p-GaN gate HEMT, and an excessive negative shift is …
is measured for Schottky-type p-GaN gate HEMT, and an excessive negative shift is …
Incorporating the Dynamic Threshold Voltage Into the SPICE Model of Schottky-Type p-GaN Gate Power HEMTs
The threshold voltage (VTH) of an enhancement-mode Schottky-type p-GaN gate high-
electron-mobility transistor (HEMT) is found to have a special dependence on the drain bias …
electron-mobility transistor (HEMT) is found to have a special dependence on the drain bias …
Analysis of drain-dependent threshold voltage and false turn-on of Schottky-type p-GaN gate HEMT in bridge-leg circuit
To assess GaN power transistors' capability to maintain a decent enhancement-mode
operation under high voltage switching operation, the impact of negative threshold voltage …
operation under high voltage switching operation, the impact of negative threshold voltage …
[HTML][HTML] Threshold voltage instability by charge trapping effects in the gate region of p-GaN HEMTs
In this work, threshold voltage instability of normally off p-GaN high electron mobility
transistors has been investigated by monitoring the gate current density during a device on …
transistors has been investigated by monitoring the gate current density during a device on …